參數(shù)資料
型號: NDB7050L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: 75 A, 50 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 6/6頁
文件大小: 64K
代理商: NDB7050L
NDP7050L.SAM
0
10
20
30
40
50
60
0
20
40
60
80
100
I , DRAIN CURRENT (A)
g
J
25°C
F
V =10V
125°C
Figure 13. Transconductance Variation with Drain
Current and Temperature
Figure 14. Maximum Safe Operating Area
Figure 15. Transient Thermal Response Curve
Typical Electrical Characteristics
(continued)
1
2
3
5
10
20
30
50
100
1
2
5
10
20
50
100
200
300
V , DRAIN-SOURCE VOLTAGE (V))
I
D
100μs
1ms
10ms
100ms
R Lmt
DS(ON)
10μs
V = 10V
SINGLE PULSE
R = 1 C/W
T = 25 °C
JC
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 1.0 °C/W
T - T = P * R (t)
P(pk)
t
1
t
2
r
相關(guān)PDF資料
PDF描述
NDP7050L N-Channel Logic Level Enhancement Mode Field Effect Transistor(75A,50V,0.013Ω)(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管(漏電流75A, 漏源電壓50V,導(dǎo)通電阻0.013Ω))
NDB7050 N-Channel Enhancement Mode Field Effect Transistor
NDP7050 N-Channel Enhancement Mode Field Effect Transistor(75A,50V,0.013Ω)(N溝道增強(qiáng)型MOS場效應(yīng)管(漏電流75A, 漏源電壓50V,導(dǎo)通電阻0.013Ω))
NDB7060 N-Channel Enhancement Mode Field Effect Transistor(N溝道增強(qiáng)型場效應(yīng)管)
NDP7060 N-Channel Enhancement Mode Field Effect Transistor(N溝道增強(qiáng)型場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDB7051 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB7051L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB7052 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB7052L 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB7060 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube