- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄363239 > NDB608A (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Enhancement Mode Field Effect Transistor（36A，80V，0.042Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流36A, 漏源電壓80V，導(dǎo)通電阻0.042Ω）) PDF資料下載
參數(shù)資料
| 型號(hào)： | NDB608A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（36A，80V，0.042Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流36A, 漏源電壓80V，導(dǎo)通電阻0.042Ω）) |
| 中文描述： | 36 A, 80 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | NDB608A |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
t
r
t
D(OFF)
Turn - Off Delay Time
t
f
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
V
DD
= 40 V, I
D
= 36 A,
V
GS
= 10 V, R
GEN
= 7.5
ALL
ALL
11
113
20
190
nS
nS
Turn - On Rise Time
ALL
ALL
37
69
60
110
nS
nS
Turn - Off Fall Time
V
DS
= 64 V,
I
D
= 36 A, V
GS
= 10V
ALL
ALL
ALL
46
8
25
65
nC
nC
nC
NDP608A
NDP608AE
NDB608A
NDB608AE
NDP608B
NDP608BE
NDB608B
NDB608BE
NDP608A
NDP608AE
NDB608A
NDB608AE
NDP608B
NDP608BE
NDB608B
NDB608BE
ALL
36
A
32
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
144
A
128
A
V
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 18 A
0.91
0.81
88
1.3
1.2
125
V
V
ns
T
J
= 125°C
t
rr
I
rr
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Reverse Recovery Time
V
GS
= 0 V, I
= 36 A,
dI
S
/dt = 100 A/μs
ALL
Reverse Recovery Current
ALL
6
9
A
R
θ
JC
R
θ
JA
Notes:
1. NDP608A/608B and NDB608A/608B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
ALL
1.5
°
C/W
Thermal Resistance, Junction-to-Ambient
ALL
62.5
°
C/W
NDP608.SAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDP608A | N-Channel Enhancement Mode Field Effect Transistor |
| NDP608AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP608B | N-Channel Enhancement Mode Field Effect Transistor |
| NDP608BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDB608AE | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB608AE | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB608B | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB608BE | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB610A | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB610AE | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。