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參數(shù)資料
| 型號(hào)： | NDB410AE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（9A,100V，0.25Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流9A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）) |
| 中文描述： | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 74K |
| 代理商： | NDB410AE |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
V
DD
= 25 V, I
D
= 9 A
NDP410AE
NDP410BE
NDB410AE
NDB410BE
50
mJ
9
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 μA
ALL
100
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 100 V,
V
GS
= 0 V
ALL
250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
ALL
100
nA
Gate - Body Leakage, Reverse
ALL
-100
nA
V
DS
= V
,
I
D
= 250 μA
ALL
2
2.9
2.3
4
V
V
T
J
= 125°C
1.4
3.6
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 4.5 A
NDP410A
NDP410AE
NDB410A
NDB410AE
0.2
0.25
T
J
= 125°C
0.38
0.5
V
GS
= 10 V,
I
D
= 4 A
NDP410B
NDP410BE
NDB410B
NDB410BE
NDP410A
NDP410AE
NDB410A
NDB410AE
NDP410B
NDP410BE
NDB410B
NDB410BE
ALL
0.3
T
J
= 125°C
0.6
A
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
9
8
A
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Forward Transconductance
V
DS
= 10 V, I
D
= 4.5 A
3
4.8
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
385
500
pF
ALL
80
100
pF
ALL
20
30
pF
NDP410.SAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDP410A | N-Channel Enhancement Mode Field Effect Transistor |
| NDP410AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP410B | N-Channel Enhancement Mode Field Effect Transistor |
| NDP410BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDB410BE | N-Channel Enhancement Mode Field Effect Transistor（8A,100V，0.3Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流8A, 漏源電壓100V，導(dǎo)通電阻0.3Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB410B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB410BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB4116 | 制造商:NICHIA 制造商全稱:NICHIA CORPORATION 功能描述:Blue Laser Diode |
| NDB4216E | 制造商:NICHIA 制造商全稱:NICHIA CORPORATION 功能描述:Blue Laser Diode |
| NDB5060 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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