參數(shù)資料
型號: NDB408BE
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Enhancement Mode Field Effect Transistor(12A,80V,0.9Ω)(N溝道增強(qiáng)型MOS場效應(yīng)管(漏電流12A, 漏源電壓80V,導(dǎo)通電阻0.9Ω))
中文描述: 11 A, 80 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 6/6頁
文件大?。?/td> 73K
代理商: NDB408BE
NDP408.SAM
0
2
4
6
8
10
0
2
4
6
8
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = 10V
125°C
t
p
t
p
V = 10V
L
+
-
V
DD
V
DD
BV
DSS
I
L
t is adjusted to reach
the desired peak inductive
current, I .
p
1
2
3
5
10
20
80
150
0.5
1
2
5
10
20
50
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 20V
SINGLE PULSE
T = 25°C
RDS(ON) Lmt
100μs
1ms
10ms
DC
10μs
Figure 13. Transconductance Variation
with Drain Current and Temperature
.
Figure 14. Unclamped Inductive Load
Circuit and Waveforms.
Figure 15. Maximum Safe Operating Area.
Figure 16. Transient Thermal Response Curve
.
Typical Electrical Characteristics
(continued)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
t ,TIME (ms)
5
10
20
50
100
200
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 3.0 °C/W
T - T = P * R (t)
P(pk)
t
1
t
2
r
0.01
相關(guān)PDF資料
PDF描述
NDB410AE N-Channel Enhancement Mode Field Effect Transistor(9A,100V,0.25Ω)(N溝道增強(qiáng)型MOS場效應(yīng)管(漏電流9A, 漏源電壓100V,導(dǎo)通電阻0.25Ω))
NDP410A N-Channel Enhancement Mode Field Effect Transistor
NDP410AE N-Channel Enhancement Mode Field Effect Transistor
NDP410B N-Channel Enhancement Mode Field Effect Transistor
NDP410BE N-Channel Enhancement Mode Field Effect Transistor
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