參數(shù)資料
型號: NDB4060
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Enhancement Mode Field Effect Transistor(15A, 60V,0.10Ω)(N溝道增強型MOS場效應管(漏電流15A, 漏源電壓60V,導通電阻0.10Ω))
中文描述: 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 6/6頁
文件大?。?/td> 66K
代理商: NDB4060
NDP4060 Rev. C
0
2
4
6
8
10
0
2
4
6
8
I , DRAIN CURRENT (A)
g
J
25°C
F
V = 15V
125°C
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t , TIME (ms)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 3.0 °C/W
T - T = P * R (t)
P(pk)
t
1
t
2
r
Figure 13. Transconductance Variation with
Drain Current and Temperature
.
Figure 14. Maximum Safe Operating Area
.
Typical Electrical Characteristics
(continued)
Figure 15. Transient Thermal Response Curve.
1
2
5
10
30
50
70
0.5
1
2
10
20
50
70
V , DRAIN-SOURCE VOLTAGE (V)
I
D
DC
RDS(ON) LIMIT
100us
1ms
10ms
50ms
V = 20V
SINGLE PULSE
R = 3 C/W
T = 25°C
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相關代理商/技術參數(shù)
參數(shù)描述
NDB4060L 功能描述:MOSFET N-CH 60V 15A D2PAK RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
NDB408A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
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NDB408B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB408BE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor