參數(shù)資料
型號(hào): NCV8664ST33T3G
廠商: ON SEMICONDUCTOR
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Ultra−Low Iq Low Dropout Linear Regulator
中文描述: 3.3 V FIXED POSITIVE LDO REGULATOR, 1.266 V DROPOUT, PSSO3
封裝: LEAD FREE, TO-261, SOT-223, 3 PIN
文件頁(yè)數(shù): 2/13頁(yè)
文件大?。?/td> 158K
代理商: NCV8664ST33T3G
NCV8664
http://onsemi.com
2
IN
Bias Current
Generators
1.3 V
Reference
+
Error
Amp
Thermal
Shutdown
OUT
GND
Figure 1. Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Symbol
Function
1
V
IN
Unregulated input voltage; 4.5 V to 45 V.
2
GND
Ground; substrate.
3
V
OUT
Regulated output voltage; collector of the internal PNP pass transistor.
TAB
GND
Ground; substrate and best thermal connection to the die.
OPERATING RANGE
Pin Symbol, Parameter
Symbol
Min
Max
Unit
V
IN
,
DC Input Operating Voltage
V
IN
4.5
+45
V
Junction Temperature Operating Range
T
J
40
+150
C
MAXIMUM RATINGS
Rating
Symbol
Min
Max
Unit
V
IN
,
DC Voltage
V
IN
42
+45
V
V
OUT
, DC Voltage
V
OUT
0.3
+16
V
Storage Temperature
T
stg
55
+150
C
ESD Capability, Human Body Model (Note 1)
V
ESDHB
4000
V
ESD Capability, Machine Model (Note 1)
V
ESDMIM
200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC
Q100
002 (EIA/JESD22
A 114C)
ESD MM tested per AEC
Q100
003 (EIA/JESD22
A 115C)
Thermal Resistance
Parameter
Symbol
Condition
Min
Max
Unit
Junction
to
Ambient
DPAK
R
JA
101 (Note 2)
°
C/W
Junction
to
Ambient
SOT
223
R
JA
99 (Note 2)
°
C/W
Junction
to
Case
DPAK
R
JC
9.0
°
C/W
Junction
to
Case
2. 1 oz., 100 mm
2
copper area.
SOT
223
R
JC
17
°
C/W
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