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參數(shù)資料
| 型號： | NCS2510DG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 1.0 GHz Current Feedback Op Amp with Enable Feature |
| 中文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 216K |
| 代理商： | NCS2510DG |
NCS2510
http://onsemi.com
3
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
V
S
11
Vdc
Input Voltage Range
V
I
V
S
Vdc
Input Differential Voltage Range
V
ID
V
S
Vdc
Output Current
I
O
100
mA
Maximum Junction Temperature (Note 3)
T
J
150
°
C
Operating Ambient Temperature
T
A
40 to +85
°
C
Storage Temperature Range
T
stg
60 to +150
°
C
Power Dissipation
P
D
(See Graph)
mW
Thermal Resistance, JunctiontoAir
SO8
SOT236
R
JA
139
121
°
C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150
°
C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage. To ensure proper operation, it is
important to observe the derating curves.
Figure 3. Power Dissipation vs. Temperature
1400
1000
800
600
400
0
50
25
100
150
M
Ambient Temperature (C)
1200
200
25
0
75
125
50
SO8 Pkg
SOT23 Pkg
1800
1600
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| NCS2510DR2 | 1.0 GHz Current Feedback Op Amp with Enable Feature |
| NCS2510DR2G | 1.0 GHz Current Feedback Op Amp with Enable Feature |
| NCS2510SNT2 | 1.0 GHz Current Feedback Op Amp with Enable Feature |
| NCS2510SNT2G | 1.0 GHz Current Feedback Op Amp with Enable Feature |
| NCS2510 | 1.4 GHz Current Feedback Op Amp(1.4GHz電流反饋運算放大器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NCS2510DR2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1.0 GHz Current Feedback Op Amp with Enable Feature |
| NCS2510DR2G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1.0 GHz Current Feedback Op Amp with Enable Feature |
| NCS2510SNT1G | 功能描述:運算放大器 - 運放 HFS-CF OP-AMP RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| NCS2510SNT2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1.0 GHz Current Feedback Op Amp with Enable Feature |
| NCS2510SNT2G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1.0 GHz Current Feedback Op Amp with Enable Feature |
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