參數(shù)資料
型號: NCS2510
廠商: ON SEMICONDUCTOR
英文描述: 1.4 GHz Current Feedback Op Amp(1.4GHz電流反饋運算放大器)
中文描述: 1.4 GHz的電流反饋運算放大器(1.4GHz的電流反饋運算放大器)
文件頁數(shù): 3/12頁
文件大小: 121K
代理商: NCS2510
NCS2510
http://onsemi.com
3
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
V
S
11
Vdc
Input Voltage Range
V
I
V
S
Vdc
Input Differential Voltage Range
V
ID
V
S
Vdc
Output Current
I
O
120
mA
Maximum Junction Temperature (Note 3)
T
J
150
°
C
Operating Ambient Temperature
T
A
40 to +85
°
C
Storage Temperature Range
T
stg
60 to +150
°
C
Power Dissipation
P
D
(See Graph)
mW
Thermal Resistance, JunctiontoAir
R
JA
121
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150
°
C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage. To ensure proper operation, it is
important to observe the derating curves.
Figure 3. Power Dissipation vs. Temperature
1400
1000
800
600
400
0
50
25
100
150
M
Ambient Temperature (C)
1200
200
25
0
75
125
50
1800
1600
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