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參數(shù)資料
| 型號： | NCS2500 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 1.1 mA 200 MHz Current Feedback Op Amp(1.1mA，200MHz電流反饋運放) |
| 中文描述： | 一點一毫安200兆赫電流反饋運算放大器（一點一毫安，200MHz的電流反饋運放） |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 221K |
| 代理商： | NCS2500 |
NCS2500
http://onsemi.com
3
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
V
S
11
V
DC
Input Voltage Range
V
I
V
S
V
DC
Input Differential Voltage Range
V
ID
V
S
V
DC
Output Current
I
O
100
mA
Maximum Junction Temperature (Note 3)
T
J
150
°
C
Operating Ambient Temperature
T
A
40 to +85
°
C
Storage Temperature Range
T
stg
60 to +150
°
C
Power Dissipation
P
D
(See Graph)
mW
Thermal Resistance, JunctiontoAir
SO8
SC705
SOT235
R
JA
172
215
154
°
C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is limited
by the associated rise in junction temperature. For the plastic
packages, the maximum safe junction temperature is 150
°
C.
If the maximum is exceeded momentarily, proper circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in the “overheated’’ condition for
an extended period can result in device damage.
Figure 3. Power Dissipation vs. Temperature
1400
1000
800
600
400
0
50
25
100
150
M
Ambient Temperature (
°
C)
1200
200
25
0
75
125
50
SC70 Pkg
SO8 Pkg
SOT23 Pkg
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NCS2501 | 1.1mA 200MHz Current Feedback Op Amp with Enable Feature(1.1mA，200MHz電流反饋放大器) |
| NCS2502 | 650μA 110MHz Current Feedback Op Amp with Enable Feature(650μA，110MHz電流反饋放大器) |
| NCS2510D | 1.0 GHz Current Feedback Op Amp with Enable Feature |
| NCS2510DG | 1.0 GHz Current Feedback Op Amp with Enable Feature |
| NCS2510DR2 | 1.0 GHz Current Feedback Op Amp with Enable Feature |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCS2500_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Power,High Speed,Current Feedback Op Amps |
| NCS2500D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1.1 mA 200 MHz Current Feedback Op Amp |
| NCS2500DG | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1.1 mA 200 MHz Current Feedback Op Amp |
| NCS2500DR2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1.1 mA 200 MHz Current Feedback Op Amp |
| NCS2500DR2G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1.1 mA 200 MHz Current Feedback Op Amp |
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