- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361104 > NCR169DRLRMG (ON SEMICONDUCTOR) General Purpose Sensitive Gate Silicon Controlled Rectifier PDF資料下載
參數(shù)資料
| 型號： | NCR169DRLRMG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | General Purpose Sensitive Gate Silicon Controlled Rectifier |
| 中文描述： | 0.8 A, 400 V, SCR, TO-92 |
| 封裝： | LEAD FREE, PLASTIC, CASE 029-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 77K |
| 代理商： | NCR169DRLRMG |
Semiconductor Components Industries, LLC, 2005
October, 2005 Rev. 1
1
Publication Order Number:
NCR169D/D
NCR169D
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Features
Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
OnState Current Rating of 0.8 Amperes RMS at 80
°
C
Surge Current Capability 10 Amperes
Immunity to dV/dt 20 V/
μ
sec Minimum at 110
°
C
Glass-Passivated Surface for Reliability and Uniformity
Device Marking: NCR169D, Date Code
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1.)
(T
J
=
40 to 110
°
C, Sine Wave, 50 to
60 Hz; Gate Open)
V
DRM,
V
RRM
400
Volts
On-State RMS Current
(T
C
= 80
°
C) 180
°
Conduction Angles
I
T(RMS)
0.8
Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
J
= 25
°
C)
I
TSM
10
Amps
Circuit Fusing Consideration (t = 10 ms)
I
2
t
0.415
A
2
s
Forward Peak Gate Power
(T
A
= 25
°
C, Pulse Width
1.0
μ
s)
P
GM
0.1
Watt
Forward Average Gate Power
(T
A
= 25
°
C, t = 20 ms)
P
G(AV)
0.10
Watt
Forward Peak Gate Current
(T
A
= 25
°
C, Pulse Width
1.0
μ
s)
I
GM
1.0
Amp
Reverse Peak Gate Voltage
(T
A
= 25
°
C, Pulse Width
1.0
μ
s)
V
GRM
5.0
Volts
Operating Junction Temperature Range
@ Rate V
RRM
and V
DRM
T
J
40 to
110
°
C
Storage Temperature Range
T
stg
40 to
150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCR
0.8 AMPERES RMS
400 VOLTS
TO92
(TO226AA)
CASE 029
STYLE 10
A
G
K
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
A
L
Y
WW = Work Week
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
= Wafer Lot
= Year
NCR
169D
ALYWW
1
2
3
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NCS2001SN2T1G | 0.9 V, Rail−to−Rail, Single Operational Amplifier |
| NCS2200SQ2T2 | Low Voltage Comparators |
| NCS2200 | Low Voltage Comparators |
| NCS2200SN1T1 | Low Voltage Comparators |
| NCS2200SN2T1 | Low Voltage Comparators |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCR169DRLRP | 功能描述:SCR 400V 800mA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| NCR169DRLRPG | 功能描述:SCR 400V 800mA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| NCR18650 | 制造商:House of Batteries 功能描述:- Bulk |
| NCR1WSKR-52-100R | 功能描述:RES CARBON FILM 100 OHM 1W 10% RoHS:是 類別:電阻器 >> 通孔電阻器 系列:NCR 產(chǎn)品變化通告:Global Part Number Change 9/Aug/2010 標(biāo)準(zhǔn)包裝:5,000 系列:RN 電阻（歐姆）:562 功率（瓦特）:0.25W，1/4W 復(fù)合體:金屬薄膜 特點:阻燃涂層 溫度系數(shù):±100ppm/°C 容差:±0.5% 封裝/外殼:軸向 尺寸/尺寸:0.093" 直徑 x 0.250" L（2.35mm x 6.35mm） 高度:- 端子數(shù):2 包裝:帶卷 (TR) 其它名稱:RN 1/4 T1 562 0.5% RRN1/4T15620.5%RRN1/4T15620.5%R-NDRN1/4T1562DRRN1/4T1562DR-ND |
| NCR1WSKR-52-10R | 功能描述:RES CARBON FILM 10 OHM 1W 10% RoHS:是 類別:電阻器 >> 通孔電阻器 系列:NCR 產(chǎn)品變化通告:Global Part Number Change 9/Aug/2010 標(biāo)準(zhǔn)包裝:5,000 系列:RN 電阻（歐姆）:562 功率（瓦特）:0.25W，1/4W 復(fù)合體:金屬薄膜 特點:阻燃涂層 溫度系數(shù):±100ppm/°C 容差:±0.5% 封裝/外殼:軸向 尺寸/尺寸:0.093" 直徑 x 0.250" L（2.35mm x 6.35mm） 高度:- 端子數(shù):2 包裝:帶卷 (TR) 其它名稱:RN 1/4 T1 562 0.5% RRN1/4T15620.5%RRN1/4T15620.5%R-NDRN1/4T1562DRRN1/4T1562DR-ND |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。