參數(shù)資料
型號(hào)： NCP5214A
廠商： ON SEMICONDUCTOR
英文描述： 2−in−1 Notebook DDR Power Controller
文件頁數(shù)： 7/31頁
文件大?。?/td> 376K
代理商： NCP5214A
NCP5214A
http://onsemi.com
7
ELECTRICAL CHARACTERISTICS
(continued)
(V
IN
= 12 V, T
A
= 40 to 85 C, V
CCA
= V
CCP
= V
BOOST
V
SWDDQ
= 5.0 V,
L = 1.8 H, C
OUT1
= 150 F x 2, C
OUT2
= 22 F x 2, RL1 = 5.6 k , R1 = 4.3 k , R2 = 3.3 k , RZ1 = 10 k , RZ2 = 130 , CP1 = 100 pF,
CZ1 = 2.2 nF, CZ2 = 4.7 nF, for min/max values unless otherwise noted. Typical values are at T
A
= 25 C.)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
ERROR AMPLIFIER
DC Gain
GAIN
(Note 5)
70
dB
Unity Gain Bandwidth
Ft
COMP_GND = 220 nF,
1.0 in Series (Note 5)
2.0
MHz
Slew Rate
SR
(Note 5)
3.0
V/ S
GATE DRIVERS
TGDDQ Gate PullHIGH Resistance
R
H_TG
V
BOOST
V
SWDDQ
= 5.0 V,
V
TGDDQ
V
SWDDQ
= 4.0 V
1.8
4.0
TGDDQ Gate PullLOW Resistance
R
L_TG
V
BOOST
V
SWDDQ
= 5.0 V,
V
TGDDQ
V
SWDDQ
= 1.0 V
1.8
4.0
BGDDQ Gate PullHIGH Resistance
R
H_BG
V
CCP
= 5.0 V, V
BGDDQ
= 4.0 V
1.8
4.0
BGDDQ Gate PullLOW Resistance
R
L_BG
V
CCP
= 5.0 V, V
BGDDQ
= 1.0 V
0.9
3.0
V
TT
ACTIVE TERMINATOR
V
TT
with Respect to 1/2V
DDQREF
d
VTT0
1/2VDDQREF – V
TT
,
VDDQREF = 2.5 V,
I
VTT
= 0 to 2.4 A
I
VTT
= 0 to –2.4 A
(Source Current)
30
30
mV
1/2VDDQREF – V
TT
,
VDDQREF = 1.8 V,
I
VTT
= 0 to 2.0 A
(Sink Current)
I
VTT
= 0 to –2.0 A
(Source Current)
30
30
mV
DDQREF Input Resistance
DDQREF_R
VDDQREF = 2.5 V
40
55
75
k
Source Current Limit
I
LIMVTsrc
2.5
3.0
A
Sink Current Limit
I
LIMVTsnk
2.5
3.0
A
SoftStart Source Current Limit
I
LIMVTSS
1.0
A
Maximum SoftStart Time
t
ssvttmax
0.32
ms
V
TTREF
OUTPUT
V
TTREF
Source Current
I
VTTR
VDDQREF = 1.8 V or 2.5 V
15
mA
V
TTREF
Accuracy Referred to 1/2V
DDQREF
d
VTTR
1/2VDDQREF – V
,
VDDQREF = 2.5 V,
I
VTTR
= 0 mA to 15 mA
25
25
mV
1/2VDDQREF – V
,
VDDQREF = 1.8 V,
I
VTTR
= 0 mA to 15 mA
18
18
mV
5. Guaranteed by design, not tested in production.
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