參數(shù)資料
型號(hào)： NCP5201
廠商： ON SEMICONDUCTOR
英文描述： Dual Output DDR Power Controller
中文描述： 雙輸出DDR電源控制器
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 69K
代理商： NCP5201
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. 9
1
Publication Order Number:
NCP5201/D
NCP5201
Dual Output
DDR Power Controller
The NCP5201 Dual DDR Power Controller is specifically
designed as a total power solution for a high current DDR memory
system. This IC combines the efficiency of a PWM controller for the
VDDQ supply with the simplicity of a linear regulator for the VTT
memory termination voltage. The secondary regulator (VTT) is
designed to automatically track at half the primary regulator voltage
(VDDQ). An internal power good voltage monitor tracks both
VDDQ and VTT outputs and notifies the user in the event of a fault
on either output. Protective features include softstart circuitry and
undervoltage monitoring of VCC and VSTBY. The IC is packaged in
a 5
×
6 QFN18.
Features
Incorporates VDDQ, VTT Regulators
Internal Switching Standby Regulator for VDDQ
All External Power MOSFETs Are NChannel
Adjustable VDDQ
VTT Tracks VDDQ/2
Fixed Switching Frequency of 250 kHz for VDDQ in Normal Mode
Doubled Switching Frequency (500 kHz) for Standby Mode
SoftStart Protection for VDDQ
Undervoltage Monitor
ShortCircuit Protection for Both VDDQ and VTT Outputs
Housed in a space saving 5
×
6 QFN18
Typical Applications
DDR Termination Voltage
Active Termination Busses (SSTL2, SSTL3)
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NCP5201MN
18Lead QFN*
61 Units/Rail
MARKING
DIAGRAM
PIN CONNECTIONS
NCP5201= Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
YY
= Year
WW
= Work Week
NCP5201
AWLYYWW
18LEAD QFN, 5 x 6 mm
MN SUFFIX
CASE 505
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
FBDDQ
FBVTT
PGND
VSTBY
VTT
VTT
OCDDQ
VDDQ
NC
SS
COMP
VCC
TGDDQ
BGDDQ
SDDQ
AGND
S3_EN
PWRGD
*5
×
6 mm
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NCP5201MNR2
18Lead QFN*
2500 Units/Reel
1
1
NOTE:
Pin 19 is the thermal pad on the bottom of
the device.
相關(guān)PDF資料
PDF描述
NCP5201MN Dual Output DDR Power Controller
NCP5201MNR2 Dual Output DDR Power Controller
NCP5203MNR2 2-in-1 DDR Power Controller
NCP5203MNR2G 2-in-1 DDR Power Controller
NCP5203 2-in-1 DDR Power Controller
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NCP5201/D 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Dual Output DDR Power Controller
NCP5201_06 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Dual Output DDR Power Controller
NCP5201MN 功能描述:DC/DC 開(kāi)關(guān)控制器 DDR Dual Power RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開(kāi)關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
NCP5201MNG 功能描述:DC/DC 開(kāi)關(guān)控制器 DDR Dual Power RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開(kāi)關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
NCP5201MNR2 功能描述:DC/DC 開(kāi)關(guān)控制器 DDR Dual Power RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開(kāi)關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
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