參數(shù)資料
型號： NBSG11BAEVB
廠商： ON SEMICONDUCTOR
英文描述： 2.5V/3.3VSiGe 1:2 Differential Clock Driver with RSECL* Outputs
中文描述： 2.5V/3.3V的硅鍺1:2差分時鐘驅動器，帶有RSECL *輸出
文件頁數(shù)： 6/10頁
文件大?。?/td> 81K
代理商： NBSG11BAEVB
NBSG11
http://onsemi.com
6
Table 7. DC CHARACTERISTICS, NECL OR RSNECL INPUT WITH NECL OUTPUT
V
CC
= 0 V; V
EE
= -3.465 V to -2.375 V (Note 18)
-40
°
C
25
°
C
70
°
C(BGA)/85
°
C(QFN)**
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
I
EE
Negative Power Supply Current
45
60
75
45
60
75
45
60
75
mA
VOH
Output HIGH Voltage (Note 19)
-1050
-970
-925
-975
-935
-900
-950
-910
-875
mV
V
OUTPP
V
IH
Output Amplitude Voltage
350
410
525
350
410
525
350
410
525
mV
Input HIGH Voltage (Single-Ended)
(Note 21)
V
-
1435
mV
V
-
1000
mV*
V
CC
V
-
1435
mV
V
-
1000
mV*
V
CC
V
-
1435
mV
V
-
1000
mV*
V
CC
V
V
IL
Input LOW Voltage (Single-Ended) (Note 22)
V
-
2.5 V
V
-
1400
mV*
V
-
150
mV
V
-
2.5 V
V
-
1400
mV*
V
-
150
mV
V
-
2.5 V
V
-
1400
mV*
V
-
150
mV
V
V
IHCMR
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 20)
V
EE
+1.2
0.0
V
EE
+1.2
0.0
V
EE
+1.2
0.0
V
R
TIN
Internal Input Termination Resistor
45
50
55
45
50
55
45
50
55
I
IH
Input HIGH Current (@ V
IH
, V
IHMAX
)
80
150
80
150
80
150
A
I
IL
Input LOW Current (@ V
IL
, V
ILMIN
)
25
100
25
100
25
100
A
NOTE: SiGe circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
18.Input and output parameters vary 1:1 with V
CC
.
19.All loading with 50 to V
CC
- 2.0 V. V
OH
/V
OL
measured at V
IH
/V
IL
.
20.V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
21.V
IH
cannot exceed V
CC
.
22.V
IL
always
≥
V
EE
.
*Typicals used for testing purposes.
**The device packaged in FCBGA-16 have maximum temperature specification of 70
°
C and devices packaged in QFN-16 have maximum
temperature specification of 85
°
C.
Table 8. AC CHARACTERISTICS for FCBGA-16
V
CC
= 0 V; V
EE
= -3.465 V to -2.375 V or V
CC
= 2.375 V to 3.465 V; V
EE
= 0 V
-40
°
C
25
°
C
70
°
C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
f
max
Maximum Frequency
(See Figure 4. F
max
/JITTER) (Note 23)
10.709
12
10.709
12
10.709
12
GHz
t
PLH
,
t
PHL
Propagation Delay to
Output Differential
90
125
160
90
125
160
90
125
160
ps
t
SKEW
Duty Cycle Skew (Note 24)
Within-Device Skew (Note 25)
Device-to-Device Skew (Note 26)
3
6
25
15
15
50
3
6
25
15
15
50
3
6
25
15
15
50
ps
t
JITTER
RMS Random Clock Jitter
f
in
< 10 GHz
Peak-to-Peak Data Dependent Jitter
f
in
< 10 Gb/s
0.2
TBD
1
0.2
TBD
1
0.2
TBD
1
ps
V
INPP
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 27)
75
2600
75
2600
75
2600
mV
t
r
t
f
Output Rise/Fall Times
(20% - 80%) @ 1 GHz
Q, Q
20
30
55
20
30
55
20
30
55
ps
23.Measured using a 500 mV source, 50% duty cycle clock source. All loading with 50 to V
CC
-2.0 V. For minimum f
max
value of 10.709 GHz,
output amplitude is approximately 200 mV (as shown in Figure 4, where output P-P spec is shown as a minimum/guarantee of around
150 mV). Input edge rates 40 ps (20% - 80%).
24.See Figure 5. t
SKEW
= |t
PLH
- t
PHL
| for a nominal 50% Differential Clock Input Waveform.
25.Within-Device skew is defined as identical transitions on similar paths through a device.
26.Device-to-device skew for identical transitions at identical V
CC
levels.
27.V
INPP
(MAX) cannot exceed V
CC
- V
EE
.
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