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參數(shù)資料
| 型號： | NBB-502-T3T |
| 廠商： | RF Micro Devices, Inc. |
| 英文描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz |
| 中文描述： | 級聯(lián)寬帶GaAs MMIC放大器DC至4GHz |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 213K |
| 代理商： | NBB-502-T3T |
4-60
NBB-502
Rev A4 050414
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
Application Notes
Die Attach
The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the
ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip.
Wire Bonding
Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable
practices for wire bonding.
Assembly Procedure
Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive
silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside
gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is
Ablebond 84-1LMI from Ablestik.
Bonding Temperature (Wedge or Ball)
It is recommended that the heater block temperature be set to 160°C±10°C.
Recommended Bias Resistor Values
Supply Voltage, V
CC
(V)
Bias Resistor, R
CC
(
)
5
31
8
10
174
12
231
15
317
20
460
117
C block
4
8
1,2,3
5,6,7,9
C block
In
Out
L choke
(optional)
R
CC
V
CC
V
D
= 3.9 V
V
DEVICE
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相關代理商/技術參數(shù) |
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| NBB-502TR13 | 制造商:RF Micro Devices Inc 功能描述:IC AMP MMIC GAAS 4GHZ 9-MPGA |
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