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參數(shù)資料
| 型號： | NBB-400-T1 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz |
| 中文描述： | 0 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, CERAMIC, MICRO-X, 4 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 196K |
| 代理商： | NBB-400-T1 |
4-37
NBB-400
Rev A8 060124
Chip Outline Drawing - NBB-400-D
Chip Dimensions: 0.017” x 0.017” x 0.004”
S ales Criteria - Unpackaged Die
Die Sales Information
All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be nego-
tiated on a case-by-case basis.
Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product
Final Visual Inspection Criteria
1
.
Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allow-
able.
Die Packaging
All die are packaged in GelPak ESD protective containers with the following specification:
O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X0).
GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is
opened the GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed
GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.
Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit
2
.
Package Storage
Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.
Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit
2
.
Die Handling
Proper ESD precautions must be taken when handling die material.
Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of twee-
zers. Do not touch die with any part of the body.
When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force
may damage GaAs devices.
INPUT
OUTPUT
GND
VIA
0.017 ± 0.001
(0.44 ± 0.03)
0.017 ± 0.001
(0.44 ± 0.03)
0.004 ± 0.001
(0.10 ± 0.03)
UNITS:
Inches
(mm)
Back of chip is ground.
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| NBB-500-D | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz |
| NBB-500-E | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz |
| NBB-500-T1 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NBB-401 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:Bias Scheme for NBB-Series Amplifiers |
| NBB-402 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz |
| NBB-402_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz |
| NBB-402-E | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz |
| NBB-402-T1 | 制造商:RF Micro Devices Inc 功能描述:IC AMP MMIC GAAS 8GHZ 9-MPGA |
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