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參數(shù)資料
| 型號(hào)： | NBB-300-T1 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.017 X 0.017 INCH, 0.004 INCH HEIGHT, ROHS COMPLIANT, CERAMIC, MICRO-X-4 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 293K |
| 代理商： | NBB-300-T1 |
2 of 12
NBB-300
Rev A11 DS070328
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Exceeding any one or a combination of these limits may cause permanent
damage.
Rating
+20
300
70
200
-45 to +85
-65 to +150
Unit
dBm
mW
mA
°C
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
Small Signal Power Gain, S21
V
D
=+3.9V, I
CC
=50mA, Z
0
=50
Ω
, T
A
=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 12.0GHz
f=12.0GHz to 14.0GHz
f=0.1GHz to 4.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 12.0GHz
BW3 (3dB)
12.0
11.0
13.0
13.0
11.0
9.5
8.0
±0.6
2.4:1
2.0:1
2.5:1
12.5
dB
dB
dB
dB
dB
dB
9.0
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
GHz
13.0
13.8
12.0
5.1
+27.1
-15
3.9
dBm
dBm
dBm
dB
dBm
dB
V
f=2.0GHz
f=6.0GHz
f=14.0GHz
f=3.0GHz
f=2.0GHz
f=0.1GHz to 12.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
δ
G
T
/
δ
T
MTTF versus Temperature
@ I
CC
=50mA
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θ
JC
3.6
4.2
-0.0015
dB/°C
85
138
°C
°C
>1,000,000
hours
272
°C/W
J
-------–
T
V
D
I
CC
θ
JC
°
C Watt
(
)
=
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NBB-310-D | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-310-PCBA-41X | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-310-T1 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-310 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-310_07 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
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| NBB-302 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
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| NBB-302_1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-302-E | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
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