
NB3N3002
http://onsemi.com
4
Table 6. AC CHARACTERISTICS (VDD = 3.3 V ±5%, GND = 0 V, TA = 40°C to +85°C; Note 7) Symbol
Characteristic
Min
Typ
Max
Unit
fCLKIN
Clock/Crystal Input Frequency
25
MHz
fCLKOUT
Output Clock Frequency
25
200
MHz
qNOISE
PhaseNoise Performance
fCLK = 200 MHz/100 MHz
dBc/Hz
@ 100 Hz offset from carrier
103/109
@ 1 kHz offset from carrier
118/127.8
@ 10 kHz offset from carrier
122/136.2
@ 100 kHz offset from carrier
130/138.8
@ 1 MHz offset from carrier
138/138.2
@ 10 MHz offset from carrier
149/164
tjit(f)
RMS Phase Jitter (at 125 MHz @ 1 MHz 40 MHz)
0.25
0.50
ps
tjitter (TIE)
fCLK = 200 MHz
2.5
ps
CycletoCycle RMS Jitter (Note
9)fCLK = 200 MHz
2
5
CycletoCycle Peak to Peak Jitter (Note
9)fCLK = 200 MHz
20
35
Period RMS Jitter (Note
9)fCLK = 200 MHz
1.5
3
Period PeaktoPeak Jitter (Note
9)fCLK = 200 MHz
10
20
OE
Output Enable/Disable Time
1.0
ms
tDUTY_CYCLE Output Clock Duty Cycle (Measured at cross point)
45
50
55
%
tR
Output Risetime (Measured from 175 mV to 525 mV, Figure 4)
175
340
700
ps
tF
Output Falltime (Measured from 525 mV to 175 mV, Figure 4)
175
340
700
ps
DtR
Output Risetime Variation (SingleEnded)
125
ps
DtF
Output Falltime Variation (SingleEnded)
125
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
6. NB3N circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit
is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
7. Measurement taken from differential output on singleended channel terminated with RS = 33.2 W, RL = 49.9 W, with load capacitance of
2 pF and current biasing resistor, RREF, from IREF (Pin 9) to GND of 475 W. See Figures 3 and 4. 8. Sampled with 20000 cycles to capture jitter component down to 100 kHz.
9. Sampled with 20000 cycles.