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參數(shù)資料
| 型號： | NAND512R4M2CZB5E |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 存儲器模塊 |
| 英文描述： | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| 中文描述： | 同一封裝內(nèi)整合了256/512Mb/1Gb（x8/x16，1.8/3V，528字節(jié)頁）NAND閃存以及256/512Mb（x16/x32，1.8V的）LPSDRAM的MCP |
| 文件頁數(shù)： | 6/23頁 |
| 文件大小： | 181K |
| 代理商： | NAND512R4M2CZB5E |
Summary description
NAND256-M, NAND512-M, NAND01G-M
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Summary description
The NAND256-M, NAND512-M and NAND01G-M are Multi-Chip Packages which combine
up to 512
Mbit LPSDRAM with a 256 Mbit, 512 Mbit or 1 Gbit NAND Flash memory. This
combination of LPSDRAM and NAND Flash can result in up to 1 Gbit of memory.
The NAND Flash memory and LPSDRAM components have separate power supplies and
grounds. They also have separate control, address and input/output signals, which allows
simultaneous access to both devices at any moment.
They are distinguished by two chip enable inputs: E
F
for the NAND Flash memory and E
D
for the LPSDRAM. See
Figure 1: Logic Diagram: NAND Flash & 1 x SDR LPSDRAM
and
Table 2: Signal Names: NAND Flash & 1 x SDR LPSDRAM
for an overview of the signals
attached to each component.
The NAND256-M, NAND512-M and NAND01G-M
are available with a 1.8 or 3V voltage
supply. See
Table 1: Product List
for a complete list of the products available.
The devices are offered in the following Multi-Chip packages:
TFBGA107 (10.5 x 13 x 1.2mm)
LFBGA137 (10.5 x 13 x 1.4mm)
TFBGA149 (10 x 13.5 x 1.2mm)
TFBGA137 (10.5 x 13 x 1.2mm)
●
●
●
●
In order to meet environmental requirements, ST offers the NAND256-M, NAND512-M and
NAND01G-M devices in ECOPACK
package. ECOPACK packages are Lead-free. The
category of second Level Interconnect is marked on the package and on the inner box label,
in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
The memories are supplied with all the NAND Flash memory bits erased (set to ‘1’).
This datasheet should be read in conjunction with the NAND Flash and LPSDRAM
datasheets.
NAND Flash Component
The NAND256-M, NAND512-M and NAND01G-M devices contain a 1.8V, 256 Mbit or 512
Mbit, x8 528 Byte Page or x16 264 Word Page, NAND Flash memory with the Chip Enable
Don’t Care option.
For detailed information on how to use the devices, see the NANDxxx-A and
NAND01GWxA2B-KGD datasheets.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND512W3M5BZB5F | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAS-xxx | SEMI-PRECISION POWER WIREWOUND RESISTOR |
| NASxxx | SEMI-PRECISION POWER WIREWOUND RESISTOR |
| NAS1581 | 100 DEG FRUSH REDUCED HEAD BOLT |
| NAS1581-10 | 100 DEG FRUSH REDUCED HEAD BOLT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND512W3A0AN6 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A0AN6E | 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A0AN6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 64MX8 12US 48TSOP - Tape and Reel |
| NAND512W3A0AV6E | 功能描述:IC FLASH 512MBIT 48WSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| NAND512W3A2BE06 | 制造商:STMicroelectronics 功能描述:512 MBIT NAND FLASH MEMORY WAFER |
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