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參數(shù)資料
| 型號： | N01L1618N1AT-70I |
| 元件分類： | SRAM |
| 英文描述： | 64K X 16 STANDARD SRAM, 70 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 184K |
| 代理商： | N01L1618N1AT-70I |
N01L1618N1A
(DOC# 14-02-009 REV G ECN# 01-0995)
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
1Mb Ultra-Low Power Asynchronous CMOS SRAM
64K × 16 bit
Overview
The N01L1618N1A is an integrated memory
device containing a 1 Mbit Static Random Access
Memory organized as 65,536 words by 16 bits. The
device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N01L1618N1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 64Kb x 16 SRAMs.
Features
Single Wide Power Supply Range
1.65 to 2.2 Volts
Very low standby current
0.5A at 1.8V (Typical)
Very low operating current
0.7mA at 1.8V and 1s (Typical)
Very low Page Mode operating current
0.5mA at 1.8V and 1s (Typical)
Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Low voltage data retention
Vcc = 1.2V
Very fast output enable access time
30ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Compact space saving BGA package avail-
able
RoHS Compliant
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply (Vcc)
Speed
Standby
Current (ISB),
Typical
Operating
Current (Icc),
Typical
N01L1618N1AB
48 - BGA
-40oC to +85oC 1.65V - 2.2V
70ns @ 1.8V
85ns @ 1.65V
0.5
A
0.7 mA @
1MHz
N01L1618N1AT
44 - TSOP II
N01L1618N1AB2
48 - BGA Green
N01L1618N1AT2 44 - TSOP II Green
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