
1500 WATT LOW CAPACITANCE 
SURFACE MOUNT  TRANSIENT 
VOLTAGE SUPPRESSOR 
W
M
.
C
SCOTTSDALE
DIVISION 
SMCGLCE6.5 thru SMCGLCE170A, e3 
SMCJLCE6.5 thru SMCJLCE170A, e3 
S
L
DES CRIPT ION 
APPEARANCE 
This surface mount Transient Voltage Suppressor (TVS) product family includes a 
rectifier diode element in series and opposite direction to achieve low capacitance 
below 100 pF.  They are also available as RoHS Compliant with an e3 suffix.  The low 
TVS capacitance may be used for protecting higher frequency applications in inductive 
switching environments or electrical systems involving secondary lightning effects per 
IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics.  They 
also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.  If bipolar 
transient capability is required, two of these low capacitance TVS devices may be used 
in parallel and opposite directions (anti-parallel) for complete ac protection (Figure 6).   
IMPORTANT:  
For the most current data, consult 
MICROSEMI’s 
 website:  
http://www.microsemi.com
FEAT URES  
APPLICAT IONS  / BENEFITS  
 Available in standoff voltage range of  6.5 to 200 V 
 Low capacitance of 100 pF or less 
 Molding compound flammability rating:  UL94V-O 
 Two different terminations available in C-bend (modified J-
Bend with DO-214AB) or Gull-wing (DO-215AB) 
 Options for screening in accordance with MIL-PRF-19500 
for JAN, JANTX, JANTXV, and JANS are available by 
adding MQ, MX, MV, or MSP prefixes respectively to part 
numbers    
 Optional 100% screening for avionics grade is available by 
adding MA prefix to part number for 100% temperature 
cycle –55oC to 125oC (10X) as well as surge (3X) and 24 
hours HTRB with post test V
BR
 & I
R 
 RoHS Compliant devices available by adding an “e3” suffix 
MAX IMUM RATINGS  
 1500 Watts of Peak Pulse Power dissipation at 25
o
C 
with 
repetition rate of 0.01% or less*
 Clamping Factor:  1.4 @ Full Rated power 
     1.30 @ 50% Rated power 
 t
clamping
 (0 volts to V
(BR)
 min):  Less than 5x10
-9
 seconds 
 Operating and Storage temperatures:  -65 to +150
C  
 Steady State power dissipation:  5.0W @ T
L
 = 50
o
C 
THERMAL RESISTANCE:  20
o
C/W (typical junction to  
lead (tab) at mounting plane 
*  When pulse testing, do not pulse in opposite direction 
   (see “Schematic Applications” section herein and 
   Figures 5 & 6 for further protection in both directions) 
 1500 Watts of Peak Pulse Power at 10/1000 
μ
s 
 Protection for aircraft fast data rate lines per select 
level waveforms in RTCA/DO-160D & ARINC 429 
Low capacitance for high speed data line 
interfaces 
IEC61000-4-2 ESD 15 kV (air), 8 kV (contact) 
IEC61000-4-5 (Lightning) as further detailed in 
LCE6.5 thru LCE170A data sheet 
T1/E1 Line Cards 
Base Stations 
WAN Interfaces 
XDSL Interfaces 
CSU/DSU Equipment
MECHANICAL AND PACK AGING 
CASE:  Molded, surface mountable
TERMINALS:  Gull-wing or C-bend (modified J-
bend) tin-lead or RoHS compliant annealed 
matte-tin plating solderable per MIL-STD-750, 
method 2026
POLARITY:  Cathode indicated by band 
MARKING:  Part number without prefix (e.g. 
LCE6.5A, LCE6.5Ae3, LCE33, LCE33Ae3, etc. 
TAPE & REEL option:  Standard per EIA-481-B 
with 16 mm tape, 750 per 7 inch reel or 2500 per 
13 inch reel (add “TR” suffix to part number)
ELECT RICAL CHARACT ERIS T ICS  @ 25
o
C 
Breakdown Voltage 
V
BR        
@ I
(BR) 
Volts 
MICROSEMI 
Part Number 
Gull-Wing 
“G” 
Bend Lead 
SMCGLCE6.5 
SMCGLCE6.5A 
SMCGLCE7.0 
SMCGLCE7.0A 
SMCGLCE7.5 
SMCGLCE7.5A 
SMCGLCE8.0 
SMCGLCE8.0A 
SMCGLCE8.5 
SMCGLCE8.5A 
SMCGLCE9.0 
SMCGLCE9.0A 
MICROSEMI 
Part Number 
Modified 
“J” 
Bend Lead 
SMCJLCE6.5 
SMCJLCE6.5A 
SMCJLCE7.0 
SMCJLCE7.0A 
SMCJLCE7.5 
SMCJLCE7.5A 
SMCJLCE8.0 
SMCJLCE8.0A 
SMCJLCE8.5 
SMCJLCE8.5A 
SMCJLCE9.0 
SMCJLCE9.0A 
Reverse 
Stand-Off 
Voltage 
V
WM 
Volts 
6.5 
6.5 
7.0 
7.0 
7.5 
7.5 
8.0 
8.0 
8.5 
8.5 
9.0 
9.0 
MIN 
7.22 
7.22 
7.78 
7.78 
8.33 
8.33 
8.89 
8.89 
9.44 
9.44 
10.0 
10.0 
MAX 
8.82 
7.98 
9.51 
8.60 
10.2 
9.21 
10.9 
9.83 
11.5 
10.4 
12.2 
11.1 
mA 
10 
10 
10 
10 
10 
10 
1 
1 
1 
1 
1 
1 
Maximum 
Reverse 
Leakage 
@V
WM
I
D
μ
A
1000 
1000 
500 
500 
250 
250 
100 
100 
50 
50 
10 
10 
Maximum 
Clamping 
Voltage  
@I
PP
V
Volts 
12.3 
11.2 
13.3 
12.0 
14.3 
12.9 
15.0 
13.6 
15.9 
14.4 
16.9 
15.4 
Maximum 
Peak Pulse 
Current 
I
PP
@10/1000 
Amps 
100 
100 
100 
100 
100 
100 
100 
100 
94 
100 
89 
97 
Maximum 
Capacitance 
@ 0 Volts, 
 f = 1 MHz 
pF 
75 
75 
75 
75 
100 
100 
100 
100 
100 
100 
100 
100 
V
WIB
Working 
Inverse 
Blocking 
Voltage 
Volts 
75 
75 
75 
75 
75 
75 
75 
75 
75 
75 
75 
75 
Microsemi 
Scottsdale Division 
Page 1
I
IB
Inverse 
Blocking 
Leakage 
Current 
mA 
1 
1 
1 
1 
1 
1 
1 
1 
1 
1 
1 
1 
V
PIB
Peak 
Inverse 
Blocking 
Voltage 
Volts 
100 
100 
100 
100 
100 
100 
100 
100 
100 
100 
100 
100 
Copyright 
 2005 
6-06-2005  REV D 
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503