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參數(shù)資料
| 型號(hào)： | MXP1002PV-IR |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 光敏二極管 |
| 英文描述： | IR Enhanced Photo Detectors |
| 中文描述： | PHOTO DIODE |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | MXP1002PV-IR |
Op t o P r o d u ct s
2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
Data Sheet #MSC0941
Updated:October 1998
MXP1048 PC/PV - IR
MXP1049 PC/PV - IR
MXP1050 PC/PV - IR
MXP1002 PC/PV - IR
Electrical Characteristics @ 25
o
C
Features
High Break Down Voltage
Low Dark Current
Low Noise
Fast Rise/Fall Time
Applications
Fiber Optics
Military / Aerospace
Industrial Controls
IR Enhanced Photo Detectors
PHOTOVOLTAIC
DEVICE #
PV
PHOTOCONDUCTIVE
PC
DEVICE #
ACTIVE AREA
R
A / W
ID
nA
V
B
10
μ
A
V
C
1kHz
pF
NEP
10V/900nm
1kHz
T
900nm/50Ohm
Load
ns
mm
2
Dia. Inch
900nm
PEAK
0.01V
-1.0V
-10V
min
0 V
-1 V
-10 V
W/(Hz)
1/2
0 V
-10 V
MXP1048 PC-IR
1.0
0.044
0.5
0.6
0.01
0.10
2.0
50
25
20
10
5 X 10
-14
1,000
50
MXP1049 PC-IR
5.1
0.100
0.5
0.6
0.10
1.00
10.0
50
100
85
35
1 X 10
-13
3,000
100
MXP1050 PC-IR
100
0.444
0.5
0.6
1.00
10.0
100
50
2,000
1,700
650
5 X 10
-13
5,000
500
MXP1002 PC-IR
1.8
0.10 x 0.28
0.5
0.6
0.20
0.20
5.0
50
50
40
20
1 X 10
-13
2,000
50
ACTIVE AREA
R
900nm
C
J
0V / 1kHz
R
SH
+/-10 mV
NEP
900nm / 1kHz
T
0V/900nm
50Ohm Load
mm
2
Dia.
Inch
A/W
pF
MOhms
W/(Hz)
1/2
ns
MXP1048 PV-IR
1.0
0.044
0.5
150
5,000
5 X 10
-15
5,000
MXP1049 PV-IR
5.1
0.100
0.5
550
500
2 X 10
-14
500
MXP1050 PV-IR
100
0.444
0.5
11,000
50
1 X 10
-13
50
MXP1002 PV-IR
1.8
0.10 x .028
0.5
275
2,500
3 X 10
-14
2,500
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|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MXP1004-PS | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Position Sensing Photo Detectors |
| MXP1004PS/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| MXP1004-Q | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Position Sensing Photo Detectors |
| MXP1005 | 制造商:Microsemi Corporation 功能描述:MXP1005 - Bulk |
| MXP1017 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Photo SCR |
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