- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380576 > MX29LV800BXEC-70 (MACRONIX INTERNATIONAL CO LTD) 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | MX29LV800BXEC-70 |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封裝： | 8 X 9 MM, 1.30 MM HEIGHT, 0.80 MM PITCH, PLASTIC, MO-219, CSP-48 |
| 文件頁數(shù)： | 1/60頁 |
| 文件大?。?/td> | 1246K |
| 代理商： | MX29LV800BXEC-70 |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁
1
P/N:PM0709
REV. 1.3, JAN. 24, 2002
MX29LV800T/B
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
PRELIMINARY
Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Tempoary sector unprotect allows code changes in
previously locked sectors.
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Low VCC write inhibit is equal to or less than 2.3V
Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-pin CSP
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
FEATURES
Extended single - supply voltage range 2.7V to 3.6V
1,048,576 x 8/524,288 x 16 switchable
Single power supply operation
- 3.0V only operation for read, erase and program
operation
Fast access time: 70/90ns
Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
GENERAL DESCRIPTION
The MX29LV800T/B is a 8-mega bit Flash memory or-
ganized as 1M bytes of 8 bits or 512K words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29LV800T/B is packaged in 44-pin
SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV800T/B offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV800T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV800T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV800T/B uses a 2.7V~3.6V VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX29LV800TXEI-70 | Silver Mica Capacitor; Capacitance:330pF; Capacitance Tolerance:+/- 1%; Series:CD10; Voltage Rating:100VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:3.6mm; Leaded Process Compatible:No RoHS Compliant: No |
| MX29LV800BXEI-70 | Silver Mica Capacitor; Capacitance:330pF; Capacitance Tolerance:+/- 1%; Series:CD10; Voltage Rating:100VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:3.6mm; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| MX29LV800TXEI-90 | 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV800BXEI-90 | Silver Mica Capacitor; Capacitance:390pF; Capacitance Tolerance: 1%; Series:CD10; Voltage Rating:100VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:3.6mm; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| MX29LV800TXEC-90 | 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV800CBMC-70G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 70NS 44SOP 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 8 Mb (1 M x 8 / 512 K x 16) 70 ns Parallel Flash - SOP-44 |
| MX29LV800CBMC-90G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 90NS 44SOP |
| MX29LV800CBMI-70G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 70NS 44SOP |
| MX29LV800CBTC-70G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 70NS 48TSOP 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 8 Mb (1M x 8/512k x 16) 90 ns Parallel Flash - TSOP-48 |
| MX29LV800CBTC-90G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 8MBIT 90NS 48TSOP 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 8 Mb (1M x 8/512k x 16) 90 ns Parallel Flash - TSOP-48 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。