參數(shù)資料
型號： MX29LV640TTC-90G
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： 12 X 20 MM, LEAD FREE, PLASTIC, MO-142, TSOP1-48
文件頁數(shù)： 1/70頁
文件大小： 1188K
代理商： MX29LV640TTC-90G
1
P/N:PM0920
REV. 1.2, NOV. 05, 2003
MX29LV640T/B
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY
FLASH MEMORY
FEATURES
GENERAL FEATURES
Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
8,388,608 x 8 / 4,194,304 x 16 switchable
Sector structure
- 8KB (4KW) x 8 and 64KB(32KW) x 127
Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
Secured Silicon Sector
- Provides a 128-word area for code or data that can
be permanently protected.
- Once this sector is protected, it is prohibited to pro-
gram or erase within the sector again.
Latch-up protected to 250mA from -1V to Vcc + 1V
Low Vcc write inhibit is equal to or less than 1.5V
Compatible with JEDEC standard
- Pin-out and software compatible to single power sup-
ply Flash
PERFORMANCE
High Performance
- Fast access time: 90/120ns
- Fast program time: 11us/word, 45s/chip (typical)
- Fast erase time: 0.9s/sector, 45s/chip (typical)
Low Power Consumption
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 0.2uA (typ.)
Minimum 100,000 erase/program cycle
20-year data retention
SOFTWARE FEATURES
Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
Status Reply
- Data polling & Toggle bits provide detection of pro-
gram and erase operation completion
HARDWARE FEATURES
Ready/Busy (RY/BY) Output
- Provides a hardware method of detecting program
and erase operation completion
Hardware Reset (RESET) Input
- Provides a hardware method to reset the internal
state machine to read mode
WP Pin
- Write protect (WP) function allows protection of two
outermost boot sectors, regardless of sector protect
status
PACKAGE
48-pin TSOP
63-ball CSP
64-ball Easy BGA
GENERAL DESCRIPTION
The MX29LV640T/B is a 64-mega bit Flash memory or-
ganized as 8M bytes of 8 bits or 4M bytes of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV640T/B is packaged in 48-pin TSOP, 63-
ball CSP and 64-ball Easy BGA. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV640T/B offers access time as fast
as 90ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV640T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
相關(guān)PDF資料
PDF描述
MX29LV640TTI-12 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640TTI-12G 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640TTI-90 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640TTI-90G 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640TXBC-12 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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