參數(shù)資料
型號： MX29LV640BTI-90
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, MO-142, TSOP1-48
文件頁數(shù)： 22/70頁
文件大?。?/td> 1188K
代理商： MX29LV640BTI-90
22
P/N:PM0920
REV. 1.2, NOV. 05, 2003
MX29LV640T/B
Notes:
1. See Table 1 for descriptions of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or automatic select data, all bus cycles are write operation.
4. Address bits are don't care for unlock and command cycles, except when PA or SA is required.
5. No unlock or command cycles required when device is in read mode.
6. The Reset command is required to return to the read mode when the device is in the automatic select mode or if
Q5 goes high.
7. The fourth cycle of the automatic select command sequence is a read cycle.
8. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block. In the third
cycle of the command sequence, address bit A21=0 to verify sectors 0~63, A21=1 to verify sectors 64~134 for
Top Boot device.
9. The data is 88h for factory locked and 08h for not factory locked.
10.The system may read and program functions in non-erasing sectors, or enter the automatic select mode, when in
the erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
11.The Erase Resume command is valid only during the Erase Suspend mode.
12.Command is valid when device is ready to read array data or when device is in automatic select mode.
Legend:
X=Don't care
RA=Address of the memory location to be read.
RD=Data read from location RA during read operation.
PA=Address of the memory location to be programmed.
Addresses are latched on the falling edge of the WE or
CE pulse, whichever happen later.
DDI=Data of device identifier
C2H for manufacture code
C9/CBH (Top/Bottom) for device code
PD=Data to be programmed at location PA. Data is
latched on the rising edge of WE or CE pulse.
SA=Address of the sector to be erase or verified (in
autoselect mode).
Address bits A21-A12 uniquely select any sector.
相關PDF資料
PDF描述
MX29LV640TXBI-12 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640TXBI-90 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640TXCC-12 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640TXCC-90 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640TXCI-12 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
相關代理商/技術參數(shù)
參數(shù)描述
MX29LV640EBTI-70G 功能描述:IC FLASH PAR 3V 64MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
MX29LV640EBXEI-70G 功能描述:IC FLASH PAR 64MB 70NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
MX29LV640EBXEI-70GTR 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 64 Mb (8M x 8/4M x 16) 70 ns Parallel Flash - TFBGA-48
MX29LV640EBXEI-90G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 64 Mb (8M x 8/4M x 16) 90 ns Parallel Flash - TFBGA-48
MX29LV640ETTI-70G 功能描述:IC FLASH PAR 3V 64MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
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