參數(shù)資料
型號(hào)： MX29LV400CTXHI-70Q
廠商： Macronix International Co., Ltd.
英文描述： 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 4分位[為512k × 8 / 256K × 16] CMOS單電壓3V時(shí)僅閃存
文件頁(yè)數(shù)： 1/68頁(yè)
文件大小： 906K
代理商： MX29LV400CTXHI-70Q
1
P/N:PM1155
REV. 1.5, APR. 24, 2006
MX29LV400C T/B
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors
CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-ball CSP (6 x 8mm)
- 48-ball CSP (4 x 6mm)
-
All Pb-free devices are RoHS Compliant
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
20 years data retention
FEATURES
Extended single - supply voltage range 2.7V to 3.6V
524,288 x 8/262,144 x 16 switchable
Single power supply operation
- 3.0V only operation for read, erase and program
operation
Fully compatible with MX29LV400T/B device
Fast access time: 55R/70/90ns
Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Byte x 1,
8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability
- Automatically program and verify data at specified
address
Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase
Status Reply
- Data# Polling & Toggle bit for detection of program
and erase operation completion
GENERAL DESCRIPTION
The MX29LV400C T/B is a 4-mega bit Flash memory
organized as 512K bytes of 8 bits or 256K words of 16
bits. MXIC's Flash memories offer the most cost-effec-
tive and reliable read/write non-volatile random access
memory. The MX29LV400C T/B is packaged in 44-pin
SOP, 48-pin TSOP and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV400C T/B offers access time as
fast as 55ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV400C T/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV400C T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV400C T/B uses a 2.7V~3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
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