參數(shù)資料
型號: MX29LV161BTI-90R
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000
中文描述: 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, TSOP1-48
文件頁數(shù): 12/58頁
文件大?。?/td> 995K
代理商: MX29LV161BTI-90R
12
P/N:PM0855
MX29LV161T/B
REV. 1.0, SEP. 24, 2001
Pins
A0
A1
Q15~Q8 Q7
Q6
Q5
Q4
Q3
Q2 Q1
Q0
Code(Hex)
Manufacture code
Word
VIL
VIL
00H
1
1
0
0
0
0
1
0
00C2H
Byte
VIL
VIL
X
1
1
0
0
0
0
1
0
C2H
Device code
Word
VIH
VIL
22H
1
1
0
0
0
1
0
0
22C4H
for MX29LV161T
Byte
VIH
VIL
X
1
1
0
0
0
1
0
0
C4H
Device code
Word
VIH
VIL
22H
0
1
0
0
1
0
0
1
2249H
for MX29LV161B
Byte
VIH
VIL
X
0
1
0
0
1
0
0
1
49H
Sector Protection
Word
X
VIH
X
0
0
0
0
0
0
0
1
01H (Protected)
Verification
Byte
X
VIH
X
0
0
0
0
0
0
0
0
00H (Unprotected)
TABLE 6. SILICON ID CODE
READING ARRAY DATA
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array data
after completing an Automatic Program or Automatic
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read tim-
ings, except that if it reads at an address within erase-
suspended sectors, the device outputs status data. After
completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See rase Suspend/Erase
Resume Commands” for more infor-mation on this mode.
The system
must
issue the reset command to re-en-
able the device for reading array data if Q5 goes high, or
while in the autoselect mode. See the "Reset Command"
section, next.
RESET COMMAND
Writing the reset command to the device resets the
device to reading array data. Address bits are don't care
for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the se-
quence cycles in a program command sequence be-fore
programming begins. This resets the device to reading
array data (also applies to programming in Erase
Suspend mode). Once programming begins,however, the
device ignores reset commands until the operation is
complete.
The reset command may be written between the se-
quence cycles in an SILICON ID READ command
sequence. Once in the SILICON ID READ mode, the
reset command
must
be written to return to reading array
data (also applies to SILICON ID READ during Erase
Suspend).
If Q5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing
array data (also applies during Erase Suspend).
相關PDF資料
PDF描述
MX29LV161BXBI-90R 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
MX29LV161T 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
MX29LV161 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161TMC-70 PUBLICATIONS, BOOKS RoHS Compliant: NA
MX29LV161TMC-90 PUBLICATIONS, BOOKS RoHS Compliant: NA
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