參數(shù)資料
型號： MX29LV160T
廠商： Macronix International Co., Ltd.
英文描述： 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 1,600位[2Mx8/1Mx16] CMOS單電壓3V時僅閃存
文件頁數(shù)： 64/66頁
文件大?。?/td> 1359K
代理商： MX29LV160T
64
P/N:PM0866
MX29LV160T/B & MX29LV160AT/AB
REV. 3.7, APR. 23, 2003
Rev. No.
2.4
2.5
Description
Change tBUSY spec. from 90ns to 90us
Correct typing error
tWPP1/tWPP2 was changed to 100ns
To modify Package Information
Separate the tBUSY spec: tBUSY:90us for sector erase
tBUSY:90ns for chip erase ; tBUSY:90ns for program
Correct typing error
Add MX29LV161T/B part number
MX29LV160T/B tBUSY=90ns at sector erase mode
MX29LV161T/B tBUSY=90us at sector erase mode
1.Separate data sheet into two files:MX29LV160T/B & MX29LV161T/B
2.tBUSY spec was changed from 90ns min. to 90ns max.
3.Add tWPP1/tWPP2 typical spec
4.Add word/byte switching spec and waveform
5.Add 90R speed grade
6.The expression of 48-ball CSP pin configuration was changed from
"Top view, ball facing up" to "Top view, ball facing down"
(The physical pin out is not changed, just a different expression.)
7.Correct mistyping
- byte/word program:7us/12us-->9us/11us
- sector size of word mode 16K words/8K words/32K words/64K words P4
--->8K words/4K words/16K words/32K words
- TA of Extended Devices was removed
- ICC4 condition: RESET=VCC
±
0.3V --> RESET=VSS
±
0.3V
- TA=0
°
C to 70
°
C -->TA=-40
°
C to 85
°
C
- Add A19~A12 into figure
Wording change of sector erase commands
Page
P24
P23,2
P40
P52~54
P24
Date
MAR/07/2001
JUL/03/2001
2.6
JUL/05/2001
2.7
2.8
P24
All
P24
P24
All
P24
P24
P47,48
P21,24,51
P2
JUL/10/2001
JUL/24/2001
2.9
SEP/24/2001
P1,24
P19
P20
P20,21,24
P35,41
P11,13,27,30 OCT/17/2001
P32
3.0
(MX29LV160T/B & MX29LV160AT/AB)
3.1
1. Combinded MX29LV160AT/AB & MX29LV160T/B datasheet to be
together
2. The system must write "Reset" command to exit "silicon-ID read
mode" & "sector protection verification" mode
3.2
1. Add 10ms time delay for erase suspend/resume
3.3
1. Correct typing error
All
JAN/11/2001
P12-14,19
P15,36
P1,2,7,10,11
13,14,16,17,51
All
P1,21,48
MAR/01/2002
MAR/08/2002
3.4
1. Modified content error
2. Updated Spec :
VLKO value : 2.3V/2.5V-->1.4V/2.1V ;
min. of tRH/tRB : 50ns/0ns-->70ns/70ns
3. Removed 44SOP package information of "A" version
4. Removed -R grade information
5. Updated Capacitance
6. Added note at Switching Test Circuit
CL=100pF for MX29LV160(A)T/B-90
CL=30pF for MX29LV160(A)T/B-70
7. To added the tVLHT & tOESP timing in AC Characteristics table
8. Redefined Erase and Programming Performance : maximum values
measued from 25
°
C, 2.7V to 85
°
C, 2.7V, 100,000 cycles
3.5
1. To modify Package Information
OCT/01/2002
P2, 55
P21,23,26,27,49,55-56
P22
P22
P26
P54
P57~61
NOV/21/2002
相關(guān)PDF資料
PDF描述
MX29LV160AT 10A 35V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50
MX29LV161BXBI-90 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161BTC-70 1 A 20 V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
MX29LV161BTC-70R 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000
MX29LV161BTC-90 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29LV320CBTC-90G 制造商:Macronix International Co Ltd 功能描述:NOR Flash, 2M x 16, 40 Pin, Plastic, TSSOP
MX29LV320CBTI-90G 制造商:MACRONIX 功能描述:
MX29LV320DBXEI-70G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 32 Mb (4 M x 8) 70 ns Parallel Flash-LFBGA-48
MX29LV320DTTI-70G 制造商:Macronix International Co Ltd 功能描述:2M X 16 FLASH 3V PROM, 70 ns, PDSO48
MX29LV320EBTI-70G 功能描述:IC FLASH PAR 3V 32MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
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