參數(shù)資料
型號(hào)： MX29LV160BBXBC-70
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： Silver Mica Capacitor; Capacitance:68pF; Capacitance Tolerance:+/- 5%; Series:CM05; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
中文描述： 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝： 6 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, MO-210, CSP-48
文件頁(yè)數(shù)： 1/63頁(yè)
文件大?。?/td> 762K
代理商： MX29LV160BBXBC-70
1
P/N:PM1041
REV. 1.2, JUL. 01, 2004
MX29LV160BT/BB
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
erase operation completion.
Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors.
CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Low VCC write inhibit is equal to or less than 1.4V
Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-ball CSP
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
10 years data retention
FEATURES
Extended single - supply voltage range 2.7V to 3.6V
2,097,152 x 8/1,048,576 x 16 switchable
Single power supply operation
- 3.0V only operation for read, erase and program
operation
Fully compatible with MX29LV160A device
Fast access time: 70/90ns
Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
Erase Suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
Status Reply
- Data polling & Toggle bit for detection of program and
GENERAL DESCRIPTION
The MX29LV160BT/BB is a 16-mega bit Flash memory
organized as 2M bytes of 8 bits or 1M words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29LV160BT/BB is packaged in 44-pin
SOP, 48-pin TSOP and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV160BT/BB offers access time as
fast as 70ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV160BT/BB has separate chip enable
(CE) and output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV160BT/BB uses a command register to man-
age this functionality. The command register allows for
100% TTL level control inputs and fixed power supply
levels during erase and programming, while maintaining
maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV160BT/BB uses a 2.7V~3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
R
相關(guān)PDF資料
PDF描述
MX29LV160BTXBC-70G MICA RoHS Compliant: No
MX29LV160BBXBC-70G MICA RoHS Compliant: No
MX29LV160BTXBC-90 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160BTXBC-90G 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160BTMI-70 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29LV160CTTI-90G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 16 Mb (2M x 8/1M x 16) 90 ns Parallel Flash - TSOP-48
MX29LV160DBGBI-70G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 16 Mb (8M x 2 / 16M x 1) 70 ns Parallel Flash - xFLGA-48
MX29LV160DBTI-70G 功能描述:IC FLASH PAR 3V 16MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
MX29LV160DBTI-70GTR 制造商:Macronix International Co Ltd 功能描述:
MX29LV160DBXBI-70G 制造商:Macronix International Co Ltd 功能描述:IC FLASH 16MBIT 70NS 48TFBGA 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 16 Mb (2M x 8/1M x 16) 70 ns Parallel Flash - FBGA-48
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