參數(shù)資料
型號: MX29LV160BB
廠商: Macronix International Co., Ltd.
英文描述: 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 1,600位[2Mx8/1Mx16] CMOS單電壓3V時僅閃存
文件頁數(shù): 18/63頁
文件大?。?/td> 762K
代理商: MX29LV160BB
18
P/N:PM1041
MX29LV160BT/BB
REV. 1.2, JUL. 01, 2004
R
ceeded the specified limits (internal pulse count). Under
these conditions Q5 will produce a "1". This time-out
condition indicates that the program or erase cycle was
not successfully completed. Data Polling and Toggle Bit
are the only operating functions of the device under this
condition.
If this time-out condition occurs during sector erase op-
eration, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still func-
tional and may be used for the program or erase opera-
tion. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.
Status
Q7
Q6
Q5
Q3
Q2
RY/BY
(Note1)
(Note2)
Byte/Word Program in Auto Program Algorithm
Q7
Toggle
0
N/A
No
0
Toggle
Auto Erase Algorithm
0
Toggle
0
1
Toggle
0
Erase Suspend Read
(Erase Suspended Sector)
1
No
0
N/A Toggle
1
Toggle
In Progress
Erase Suspended Mode
Erase Suspend Read
(Non-Erase Suspended Sector)
Data
Data
Data
Data
Data
1
Erase Suspend Program
Q7
Toggle
0
N/A
N/A
0
Byte/Word Program in Auto Program Algorithm
Q7
Toggle
1
N/A
No
0
Toggle
Exceeded
Time Limits Auto Erase Algorithm
0
Toggle
1
1
Toggle
0
Erase Suspend Program
Q7
Toggle
1
N/A
N/A
0
Table 8. WRITE OPERATION STATUS
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5: Exceeded Timing Limits " for more information.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or com-
bination of sectors are bad.
If this time-out condition occurs during the byte/word
programming operation, it specifies that the entire sec-
tor containing that byte/word is bad and this sector may
not be reused, (other sectors are still functional and can
be reused).
The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please
note that this is not a device failure condition since the
device was incorrectly used.
相關(guān)PDF資料
PDF描述
MX29LV160BTXEI-90 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160BTXEI-90G 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160BTTI-70G 1A 100V Schottky Rectifier; Package: Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia; No of Pins: 2; Container: Tape and Reel; Qty per Container: 5000
MX29LV160BTTI-90 1A 100V Schottky Rectifier; Package: Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia; No of Pins: 2; Container: Tape and Reel; Qty per Container: 5000
MX29LV160BTTI-90G 1 A 20 V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29LV160BBTC-90 制造商:MX-COM Inc 功能描述:1M X 16 FLASH 3V PROM, 90 ns, PDSO48
MX29LV160CTTI-90G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 16 Mb (2M x 8/1M x 16) 90 ns Parallel Flash - TSOP-48
MX29LV160DBGBI-70G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 16 Mb (8M x 2 / 16M x 1) 70 ns Parallel Flash - xFLGA-48
MX29LV160DBTI-70G 功能描述:IC FLASH PAR 3V 16MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G(256M x 16) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
MX29LV160DBTI-70GTR 制造商:Macronix International Co Ltd 功能描述: