參數(shù)資料
型號(hào)： MX29LV081TI-90
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
中文描述： 1M X 8 FLASH 3V PROM, 90 ns, PDSO40
封裝： 10 X 20 MM, PLASTIC, MO-142, TSOP1-40
文件頁(yè)數(shù)： 1/51頁(yè)
文件大小： 466K
代理商： MX29LV081TI-90
1
P/N:PM0717
REV. 1.0, JUL. 31, 2001
MX29LV081
PRELIMINARY
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE
3V ONLY EQUAL SECTOR FLASH MEMORY
Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Any combination of sectors can be erased with erase
suspend/resume function.
- Tempoary sector unprotect allows code changes in
previously locked sectors.
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1
Low VCC write inhibit is equal to or less than 2.3V
Package type:
- 40-pin TSOP
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
FEATURES
Extended single - supply voltage range 2.7V to 3.6V
1,048,576 x 8
Single power supply operation
- 3.0V only operation for read, erase and program
operation
Fast access time: 70/90ns
Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
Command register architecture
- Byte/word Programming (7us/12us typical)
- Sector Erase (Sector structure 64K-Byte x16)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
GENERAL DESCRIPTION
The MX29LV081 is a 8-mega bit Flash memory orga-
nized as 1M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV081 is
packaged in 40-pin TSOP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX29LV081 offers access time as fast as
70ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29LV081 has separate chip enable (CE) and output
enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV081 uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV081 uses a 2.7V~3.6V VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
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