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參數(shù)資料
| 型號(hào)： | MX29LV004TTI-90 |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | Single Output LDO, 100mA, Adj.(0.7 to 5.5V), Low Quiescent Current, Over Current Limitation 5-SOT-23 -40 to 125 |
| 中文描述： | 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| 封裝： | 10 X 20 MM, PLASTIC, MO-142, TSOP1-40 |
| 文件頁數(shù)： | 1/54頁 |
| 文件大?。?/td> | 724K |
| 代理商： | MX29LV004TTI-90 |
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1
P/N:PM0732
REV. 1.1, SEP. 19, 2001
MX29LV004T/B
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Tempoary sector unprotect allows code changes in
previously locked sectors.
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Low VCC write inhibit is equal to or less than 2.3V
Package type:
- 40-pin TSOP
- 32-pin PLCC
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
FEATURES
Extended single - supply voltage range 2.7V to 3.6V
524,288 x 8
Single power supply operation
- 3.0V only operation for read, erase and program
operation
Fast access time: 55R/70/90ns
Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
Command register architecture
- Byte Programming (9us typical)
- Sector Erase (Sector structure 16K-Byte x 1,
8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
GENERAL DESCRIPTION
The MX29LV004T/B is a 4-mega bit Flash memory or-
ganized as 512K bytes of 8 bits. MXIC's Flash memo-
ries offer the most cost-effective and reliable read/write
non-volatile random access memory. The MX29LV004T/
B is packaged in 40-pin TSOP and 32-pin PLCC. It is
designed to be reprogrammed and erased in system or
in standard EPROM programmers.
The standard MX29LV004T/B offers access time as fast
as 55ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV004T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV004T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV004T/B uses a 2.7V~3.6V VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
PRELIMINARY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX29LV004BQC-55R | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV004BQC-70 | illuminated pushbutton switch with modular interface/contact block design |
| MX29LV004BQC-90 | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV004BQI-70 | SWITCH SLIDE SPDT 30V .2A L=4 |
| MX29LV004BQI-90 | SWITCH SLIDE SPDT 30V .2A L=5.5 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV040CQC-55Q | 制造商:Macronix International Co Ltd 功能描述:4M (512K X8) 70NS 32PLCC |
| MX29LV040CQC-70G | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 70 ns Parallel Flash - PLCC-32 |
| MX29LV040CQC-90G | 制造商:MISCELLANEOUS 功能描述: 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 90NS 32PLCC 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 90 ns Parallel Flash - PLCC-32 |
| MX29LV040CQI-55Q | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 55NS 32PLCC 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 55 ns Parallel Flash - PLCC-32 |
| MX29LV040CQI-70G | 功能描述:IC FLASH PAR 3V 4MB 70NS 32PLCC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
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