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參數(shù)資料
| 型號： | MX29LV004TQI-70 |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 512K X 8 FLASH 3V PROM, 70 ns, PQCC32 |
| 封裝： | PLASTIC, MS-016, LCC-32 |
| 文件頁數(shù)： | 11/54頁 |
| 文件大?。?/td> | 724K |
| 代理商： | MX29LV004TQI-70 |
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11
P/N:PM0732
MX29LV004T/B
REV. 1.1, SEP. 19, 2001
Pins
A0
A1
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Code(Hex)
Manufacture code
VIL
VIL
1
1
0
0
0
0
1
0
C2H
Device code
VIH
VIL
1
0
1
1
1
0
0
1
22B9H
for MX29LV004T
VIH
VIL
1
0
1
1
1
0
0
1
B5H
Device code
VIH
VIL
1
0
1
1
1
0
1
0
22BAH
for MX29LV004B
VIH
VIL
1
0
1
1
1
0
1
0
B6H
Sector Protection
X
VIH
0
0
0
0
0
0
0
1
01H (Protected)
Verification
X
VIH
0
0
0
0
0
0
0
0
00H (Unprotected)
TABLE 6. EXPANDED SILICON ID CODE
READING ARRAY DATA
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array data
after completing an Automatic Program or Automatic
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read tim-
ings, except that if it reads at an address within erase-
suspended sectors, the device outputs status data. After
completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See rase Suspend/Erase
Resume Commands” for more infor-mation on this mode.
The system
must
issue the reset command to re-en-
able the device for reading array data if Q5 goes high, or
while in the autoselect mode. See the "Reset Command"
section, next.
RESET COMMAND
Writing the reset command to the device resets the
device to reading array data. Address bits are don't care
for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the se-
quence cycles in a program command sequence be-fore
programming begins. This resets the device to reading
array data (also applies to programming in Erase
Suspend mode). Once programming begins,however, the
device ignores reset commands until the operation is
complete.
The reset command may be written between the se-
quence cycles in an SILICON ID READ command
sequence. Once in the SILICON ID READ mode, the
reset command
must
be written to return to reading array
data (also applies to SILICON ID READ during Erase
Suspend).
If Q5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing
array data (also applies during Erase Suspend).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV040CQC-55Q | 制造商:Macronix International Co Ltd 功能描述:4M (512K X8) 70NS 32PLCC |
| MX29LV040CQC-70G | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 70 ns Parallel Flash - PLCC-32 |
| MX29LV040CQC-90G | 制造商:MISCELLANEOUS 功能描述: 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 90NS 32PLCC 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 90 ns Parallel Flash - PLCC-32 |
| MX29LV040CQI-55Q | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 55NS 32PLCC 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 55 ns Parallel Flash - PLCC-32 |
| MX29LV040CQI-70G | 功能描述:IC FLASH PAR 3V 4MB 70NS 32PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
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