參數(shù)資料
型號(hào)： MX29LV004BTC-55R
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 512K X 8 FLASH 3.3V PROM, 55 ns, PDSO40
封裝： 10 X 20 MM, PLASTIC, MO-142, TSOP1-40
文件頁(yè)數(shù)： 7/54頁(yè)
文件大?。?/td> 724K
代理商： MX29LV004BTC-55R
7
P/N:PM0732
MX29LV004T/B
REV. 1.1, SEP. 19, 2001
First Bus
Cycle
Second Bus
Cycle
Third Bus
Cycle
Fourth Bus
Cycle
Fifth Bus
Cycle
Sixth Bus
Cycle
Command
Bus
Cycle Addr
Data Addr
Data
Addr
Data Addr
Data
Addr
Data Addr
Data
Reset
1
XXXH F0H
Read
1
RA
RD
Read Silicon ID
4
555H AAH 2AAH
55H
555H
90H
ADI
DDI
Sector Protect
4
555H AAH 2AAH
55H
555H
90H
(SA)
00H
Verify
x02H
01H
Porgram
4
555H AAH 2AAH
55H
555H
A0H PA
PD
Chip Erase
6
555H AAH 2AAH
55H
555H
80H
555H
AAH
2AAH 55H
555H 10H
Sector Erase
6
555H AAH 2AAH
55H
555H
80H
555H
AAH
2AAH 55H
SA
30H
Sector Erase Suspend
1
XXXH B0H
Sector Erase Resume
1
XXXH 30H
TABLE 4. MX29LV004T/B COMMAND DEFINITIONS
Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A17=do
not care.
(Refer to table 3)
DDI = Data of Device identifier : C2H for manufacture code, B5H/B6H (Top/Bottom) for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2. PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector to be erased.
3. The system should generate the following address patterns: 555H or 2AAH to Address A11~A0.
Address bit A12~A18=X=Don't care for all address commands except for Program Address (PA) and Sector
Address (SA). Write Sequence may be initiated with A12~A18 in either state.
4. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out
data is 00H, it means the sector is still not being protected.
相關(guān)PDF資料
PDF描述
MX29LV004BTC-70 Replaced by OPA128 :
MX29LV004BTC-90 Replaced by OPA128 :
MX29LV004BTI-90 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV004T 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV004TTC-55R 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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