參數(shù)資料
型號(hào)： MX29L3211MC-10
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
中文描述： 2M X 16 FLASH 3.3V PROM, 100 ns, PDSO44
封裝： 0.500 INCH, PLASTIC, MO-175, SOP-44
文件頁數(shù)： 10/38頁
文件大小： 659K
代理商： MX29L3211MC-10
10
P/N:PM0641
REV. 0.3, NOV. 06, 2001
MX29L3211
SECTOR ERASE
Sector erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
set-up command-80H. Two more "unlock" write cycles
are then followed by the sector erase command-30H.
The sector address is latched on the falling edge of WE,
while the command (data) is latched on the rising edge
of WE.
Sector erase does not require the user to program the
device prior to erase. The system is not required to
provide any controls or timings during these operations.
The automatic sector erase begins on the rising edge of
the last WE pulse in the command sequence and
terminates when the status on Q7 is "1" at which time the
device stays at read status register mode. The device
remains enabled for read status register mode until the
CIR contents are altered by a valid command
sequence.(Refer to table 3,6 and Figure 3,4,7,9)
ERASE SUSPEND
This command only has meaning while the the WSM is
executing SECTOR or CHIP erase operation, and
therefore will only be responded to during SECTOR or
CHIP erase operation. After this command has been
executed, the CIR will initiate the WSM to suspend erase
operations, and then return to Read Status Register
mode. The WSM will set the Q6 bit to a "1". Once the
WSM has reached the Suspend state,the WSM will set
the Q7 bit to a "1", At this time, WSM allows the CIR to
respond to the Read Array, Read Status Register, Abort
and Erase Resume commands only. In this mode, the
CIR will not resopnd to any other comands. The WSM
will continue to run, idling in the SUSPEND state,
regardless of the state of all input control pins.
ERASE RESUME
This command will cause the CIR to clear the suspend
state and set the Q6 to a 0', but only if an Erase Suspend
command was previously issued. Erase Resume will
not have any effect in all other conditions.
A20
A19
A18
A17
A16
Address Range[A20,A0]
SA0
0
0
0
0
0
000000H--00FFFFH
SA1
0
0
0
0
1
010000H--01FFFFH
SA2
0
0
0
1
0
020000H--02FFFFH
SA3
0
0
0
1
1
030000H--03FFFFH
SA4
0
0
1
0
0
040000H--04FFFFH
...
...
...
...
... ................................
SA31
1
1
1
1
1
1F0000H--1FFFFFH
Table 5. MX29L3211 Sector Address Table
(Word-Wide Mode)
A6 specify the word address withih the page. The byte
(word) may be loaded in any order; sequential loading is
not required. If a high to low transition of CE or WE is not
detected whithin 100us of the last low to high transition,
the load period will end and the internal programming
period will start. The Auto page program terminates
when status on Q7 is '1' at which time the device stays
at read status register mode until the CIR contents are
altered by a valid command sequence.(Refer to table
3,6 and Figure 1,7,8)
CHIP ERASE
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command-80H. Two more "unlock" write cycles
are then followed by the chip erase command-10H.
Chip erase does not require the user to program the
device prior to erase.
The automatic erase begins on the rising edge of the last
WE pulse in the command sequence and terminates
when the status on Q7 is "1" at which time the device
stays at read status register mode. The device remains
enabled for read status register mode until the CIR
contents are altered by a valid command sequence.(Refer
to table 3,6 and Figure 2,7,9)
相關(guān)PDF資料
PDF描述
MX29L3211TC-10 LEAD, MINI USB A TO MINI USB B, 2M; Connector type A:Mini USB A; Connector type B:Mini USB B; Length, lead:2m; Cable type:USB; Ways, No. of:4; Current rating:1A; Data rate:400Mbps; Data rate, max:400Mbps; Flammability rating:UL94V-0; RoHS Compliant: Yes
MX29LV004TQI-70 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV004TQI-90 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV004TQC-55R 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV004TQC-70 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29LV002NCTTI-70GTR 制造商:Macronix International Co Ltd 功能描述:IC,MX29LV002NCTTI,NOR FLASH,TS
MX29LV040CQC-55Q 制造商:Macronix International Co Ltd 功能描述:4M (512K X8) 70NS 32PLCC
MX29LV040CQC-70G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 70 ns Parallel Flash - PLCC-32
MX29LV040CQC-90G 制造商:MISCELLANEOUS 功能描述: 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 90NS 32PLCC 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 90 ns Parallel Flash - PLCC-32
MX29LV040CQI-55Q 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 55NS 32PLCC 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 4 Mb (512K x 8) 55 ns Parallel Flash - PLCC-32
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*