參數(shù)資料
型號: MX29F800TTC-12
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
中文描述: 512K X 16 FLASH 5V PROM, 120 ns, PDSO48
封裝: 12 X 20 MM, MO-142, TSOP1-48
文件頁數(shù): 20/42頁
文件大?。?/td> 693K
代理商: MX29F800TTC-12
20
P/N:PM0578
MX29F800T/B
REV. 1.7, JUL. 24, 2001
All data in chip are erased. External erase verification
is not required because data is erased automatically
by internal control circuit. Erasure completion can be
verified by DATA polling and toggle bit checking after
automatic erase starts. Device outputs 0 during era-
sure and 1 after erasure on Q7.(Q6 is for toggle bit; see
toggle bit, DATA polling, timing waveform)
AUTOMATIC CHIP ERASE TIMING WAVEFORM (WORD MODE)
AUTOMATIC CHIP ERASE TIMING WAVEFORM
tCWC
tAS
tCEP
tDS tDH
Vcc 5V
CE
OE
Q0,Q1,
Q4(Note 1)
WE
A11~A18
tCEPH1
tAH
Q7
Command In
A0~A10
Command In
Command In
Command In
Command In
Command In
tAETC
DATA polling
2AAH
555H
555H
Command #AAH
(Q0~Q7)
Command #55H
Command #80H
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
555H
2AAH
555H
Command In
Command In
Command #AAH
Command In
Command In
Command #55H
Command In
Command In
Command #10H
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