參數(shù)資料
型號: MX29F200BMC-90
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
中文描述: 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
封裝: 0.500 INCH, PLASTIC, MO-175, SOP-44
文件頁數(shù): 28/46頁
文件大?。?/td> 720K
代理商: MX29F200BMC-90
28
P/N:PM0549
REV. 1.3 , DEC. 24, 2001
MX29F200T/B
All data in chip are erased. External erase verification is
not required because data is erased automatically by
internal control circuit. Erasure completion can be
verified by DATA polling and toggle bit checking after
AUTOMATIC CHIP ERASE TIMING WAVEFORM (WORD MODE)
AUTOMATIC CHIP ERASE TIMING WAVEFORM
automatic erase starts. Device outputs 0 during erasure
and 1 after erasure 0n Q7.(Q6 is for toggle bit; see toggle
bit, DATA polling, timing waveform)
tCWC
tAS
tCEP
tDS tDH
Vcc 5V
CE
OE
Q0,Q1,
Q4(Note 1)
WE
A11~A16
tCEPH1
tAH
Q7
Command In
A0~A10
Command In
Command In
Command In
Command In
Command In
tAETC
DATA polling
2AAH
555H
555H
Command #AAH
(Q0~Q7)
Command #55H
Command #80H
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
555H
2AAH
555H
Command In
Command In
Command #AAH
Command In
Command In
Command #55H
Command In
Command In
Command #10H
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