參數(shù)資料
型號: MX29F100T
廠商: Macronix International Co., Ltd.
英文描述: 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
中文描述: 100萬位[128Kx8/64Kx16]的CMOS閃存
文件頁數(shù): 7/47頁
文件大?。?/td> 706K
代理商: MX29F100T
7
P/N:PM0548
MX29F100T/B
REV. 1.2, NOV. 12, 2001
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing
them in the improper sequence will reset the device to
the read mode. Table 1 defines the valid register com-
mand sequences. Note that the Erase Suspend (B0H)
and Erase Resume (30H) commands are valid only
while the Sector Erase operation is in progress. Either
of the two reset command sequences will reset the
device(when applicable).
相關PDF資料
PDF描述
MX29F100TMC-12 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
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相關代理商/技術參數(shù)
參數(shù)描述
MX29F100TMC-12 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TMC-55 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TMC70 制造商:N/A 功能描述:NEW
MX29F100TMC-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TMC-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY