參數(shù)資料
型號(hào)： MX29F100BTC-55
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 13/43頁
文件大?。?/td> 570K
代理商： MX29F100BTC-55
13
REV. 2.3, JUL. 09, 2002
P/N: PM0515
MX29F001T/B
ABSOLUTE MAXIMUM RATINGS
RATING
Ambient Operating
Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
A9 & OE
VALUE
0
o
C to 70
o
C (Commerical)
-40
o
C to 85
o
C (Industrial)
-65
o
C to 125
o
C
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and
functional operational sections of this specification is
not implied. Exposure to absolute maximum rating
conditions for extended period may affect reliability.
NOTICE:
Specifications contained within the following tables are
subject to change.
SYMBOL
CIN1
CIN2
COUT
PARAMETER
Input Capacitance
Control Pin Capacitance
Output Capacitance
MIN.
TYP
MAX.
8
12
12
UNIT
pF
pF
pF
CONDITIONS
VIN = 0V
VIN = 0V
VOUT = 0V
READ OPERATION
DC CHARACTERISTICS
VCC = 5V
±
10% (VCC = 5V
±
5% for 29F001T/B-55)
SYMBOL
PARAMETER
MIN.
TYP
MAX.
UNIT
CONDITIONS
ILI
Input Leakage Current
1
uA
VIN = GND to VCC
ILO
Output Leakage Current
10
uA
VOUT = GND to VCC
ISB1
Standby VCC current
1
mA
CE = VIH
ISB2
1
5
uA
CE = VCC + 0.3V
ICC1
Operating VCC current
30
mA
IOUT = 0mA, f=5MHz
ICC2
50
mA
IOUT = 0mA, f=10MHz
VIL
Input Low Voltage
-0.3(NOTE 1)
0.8
V
VIH
Input High Voltage
2.0
VCC + 0.3
V
VOL
Output Low Voltage
0.45
V
IOL = 2.1mA
VOH1
Output High Voltage(TTL)
2.4
V
IOH = -2mA
VOH2
Output High Voltage(CMOS)
VCC-0.4
V
IOH = -100uA
VCC=VCC MIN
NOTES:
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
CAPACITANCE
TA = 25
o
C, f = 1.0 MHz
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