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參數(shù)資料
| 型號(hào)： | MX29F040CTI-70 |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 |
| 封裝： | 8 X 20 MM, MO-142, TSOP1-32 |
| 文件頁(yè)數(shù)： | 1/38頁(yè) |
| 文件大?。?/td> | 592K |
| 代理商： | MX29F040CTI-70 |
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FEATURES
524,288 x 8 only
Single power supply operation
- 5.0V only operation for read, erase and program op-
eration
Fast access time: 55/70/90ns
Compatible with MX29F040 device
Low power consumption
- 30mA maximum active current(5MHz)
- 1uA typical standby current
Command register architecture
- Byte Programming (9us typical)
- Sector Erase
8 equal sectors of 64K-Byte each
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability
- Automatically program and verify data at specified
address
Erase suspend/Erase Resume
- Suspends an erase operation to read data from, or
program data to, another sector that is not being erased,
erase and programming, while maintaining maximum
EPROM compatibility.
MXIC Flash technology reliably stores memory con-
tents even after 100,000 erase and program cycles.
The MXIC cell is designed to optimize the erase
and program mechanisms. In addition, the combi-
nation of advanced tunnel oxide processing and low
internal electric fields for erase and programming
operations produces reliable cycling. The
MX29F040C uses a 5.0V
±
10% VCC supply to per-
form the High Reliability Erase and auto Program/
Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to 100
milliamps on address and data pin from -1V to VCC
+ 1V.
GENERAL DESCRIPTION
The MX29F040C is a 4-mega bit Flash memory orga-
nized as 512K bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29F040C is
packaged in 32-pin PLCC, TSOP, PDIP. It is designed
to be reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29F040C offers access time as fast as
55ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29F040C has separate chip enable (CE#) and output
enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F040C uses a command register to manage this
functionality. The command register allows for 100% TTL
level control inputs and fixed power supply levels during
then resumes the erase
Status Reply
- Data# Polling & Toggle bit for detection of program
and erase cycle completion
Sector protect/chip unprotect for 5V only system
Sector protection
- Hardware method to disable any combination of sec-
tors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors
100,000 minimum erase/program cycles
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Low VCC write inhibit is equal to or less than 3.2V
Package type:
- 32-pin PLCC, TSOP or PDIP
-
All Pb-free devices are RoHS Compliant
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
20 years data retention
1
P/N:PM1201
REV. 1.0, DEC. 20, 2005
MX29F040C
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY
EQUAL SECTOR FLASH MEMORY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX29F040CTI-70G | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| MX29F040CTI-90 | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| MX29F040CTI-90G | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| MX29F040QC-55G | 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
| MX29F040QC-70G | 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29F040CTI-70G | 功能描述:IC FLASH PAR 5V 4MB 70NS 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MX29F 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| MX29F040CTI-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| MX29F040CTI-90G | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| MX29F040PC-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
| MX29F040PC-55 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
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