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參數(shù)資料
| 型號： | MX28F640C3BTTI-12 |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | 12 X 20 MM, MO-142, TSOP1-48 |
| 文件頁數(shù)： | 1/41頁 |
| 文件大?。?/td> | 307K |
| 代理商： | MX28F640C3BTTI-12 |
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1
P/N:PM1084
REV. 0.0, MAR. 17, 2004
MX28F640C3BT/B
64M-BIT [4M x16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
ADVANCED INFORMATION
Automatic Suspend Enhance
- Word write suspend to read
- Sector erase suspend to word write
- Sector erase suspend to read register report
Automatic sector erase, full chip erase, word write and
sector lock/unlock configuration
Status Reply
- Detection of program and erase operation comple-
tion.
- Command User Interface (CUI)
- Status Register (SR)
Data Protection Performance
- Include boot sectors and parameter and main sectors
to be block/unblock
100,000 minimum erase/program cycles
Common Flash Interface (CFI)
128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User-Programmable
Latch-up protected to 100mA from -1V to VCC+1V
Package type:
- 48-pin TSOP (12mm x 20mm)
FEATURES
Bit Organization: 4,194,304 x 16
Single power supply operation
- 3.0V only operation for read, erase and program
operation
- VCC=VCCQ=2.7~3.6V
- Operating temperature:-40
°
C~85
°
C
Fast access time : 90/120ns
Low power consumption
- 9mA maximum active read current, f=5MHz (CMOS
input)
- 21mA program erase current maximum
(VPP=1.65~3.6V)
- 7uA typical standby current under power saving
mode
Sector architecture
- Sector Erase (Sector structure : 4Kword x 2 (boot
sectors), 4Kword x 6 (parameter sectors), 32Kword x
127 (parameter sectors)
- Top/Bottom Boot
Auto Erase (chip & sector) and Auto Program
- Automatically program and verify data at specified
address
GENERAL DESCRIPTION
The MX28F640C3BT/B is a 64-mega bit Flash memory
organized as 4M words of 16 bits. The 1M word of data
is arranged in eight 4Kword boot and parameter sectors,
and 127 32Kword main sector which are individually
erasable. MXIC's Flash memories offer the most cost-
effective and reliable read/write non-volatile random ac-
cess memory. The MX28F640C3BT/B is packaged in
48-pin TSOP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
The standard MX28F640C3BT/B offers access time as
fast as 90ns, allowing operation of high-speed micropro-
cessors without wait states.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX28F640C3BT/B uses a command register to man-
age this functionality. The command register allows for
100% TTL level control inputs and fixed power supply
levels during erase and programming, while maintaining
maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
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| MX28F640C3BTTI-90 | 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F640C3B | 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F640C3BTC-12 | 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX28F640C3BTTI-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F640C3BXAC-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F640C3BXAC-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F640C3BXAI-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F640C3BXAI-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
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