參數(shù)資料
型號(hào): MX28F2000P
廠商: Macronix International Co., Ltd.
英文描述: 2M-BIT [256K x 8] CMOS FLASH MEMORY
中文描述: 200萬位[256K × 8]的CMOS閃存
文件頁數(shù): 20/33頁
文件大小: 191K
代理商: MX28F2000P
20
P/N: PM0380
REV. 1.5, OCT 29, 1998
MX28F2000P
checking after automatic erase starts. Device outputs 0
during erasure and 1 after erasure on Q7. Q0 to Q5 (Q6
is for toggle bit; see toggle bit, DATA polling, timing
waveform) are in high impedance.
AUTOMATIC BLOCK ERASE TIMING WAVEFORM
Block data indicated by A12 to A17 are erased. External
erase verify is not required because data are erased
automatically by internal control circuit. Erasure comple-
tion can be verified by DATA polling and toggle bit
*Refer to page 2 for detailed block address.
Vcc 5V
tCEP
tOES
tDF
Command in
OE
Command in
Command in
Command in
tCESC
tDS
tDH
tDS
tDH
aBlock
aBlock
tCWC
tAS
tAH
tBALC
tCEP
12V
Vpp
0V
aBlock
Command #20H Command #D0H
tVPH
tVPS
tBAL
tAETB
Q7
Q0~Q5
Auto block erase & DATA polling
DATA polling
A12 ~ A17
CE
WE
tCEPH2
tCEPH1
tCH
tCS
tAH1
Setup auto block erase/erase command
tDPA
A0 ~ A11
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