參數(shù)資料
型號(hào): MX28F160C3TXAI-90G
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類(lèi): DRAM
英文描述: 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝: 8 X 6 MM, 1.20 MM HEIGHT, 0.75 MM PITCH, MO-207, CSP-48
文件頁(yè)數(shù): 24/44頁(yè)
文件大?。?/td> 429K
代理商: MX28F160C3TXAI-90G
24
P/N:PM0867
MX28F160C3T/B
REV. 1.2, MAR. 17, 2004
Figure 4. WRITE AND ERASE OPERATION AC WAVEFORM
Notes:
1. CE must be toggled low when reading Status Register Data. WE must be inactive (high) when reading Status
Register Data.
A.VCC Power-Up and Standby.
B.Write Program or Erase Setup Command.
C.Write Valid Address and Data (for Program) or Erase Confirm Command.
D.Automated Program or Erase Delay.
E.Read Status Register Data (SRD): reflects completed program/erase operation.
F.Write Read Array Command.
tVPWH
(tVPEH)
tQVVL
tWHWL
(tEHEL)
tWHGL
tPHWL
(tPHEL)
(Note 1)
(Note 1)
tELEH
(tWLWH)
tWHDX
(tEHDX)
tWHEH
(tEHWH)
tELWL
(tWLEL)
tAVWH
(tAVEH)
tWHAX
(tEHAX)
tDVWH
(tEVEH)
tBHWH
(tBHEH)
tQVBL
High Z
DIN
Address (A)
A
B
C
D
E
F
VIH
VIL
OE(G)
VIH
VIL
VIH
VIL
CE(WE)[E(W)]
VIH
Disable
EnableVIL
WE,(CE)[W(E)]
VIH
VIL
DATA[D/Q]
VOH
VOL
RP[P]
VIH
VIL
VPPH1
VPPLK
VPPH2
VIL
WP
VPP[V]
DIN
AIN
AIN
DIN
Valid
SRD
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