參數(shù)資料
型號(hào)： MX28F160C3TXAC-11
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 1M X 16 FLASH 3V PROM, 110 ns, PBGA48
封裝： 8 X 6 MM, 1.20 MM HEIGHT, 0.75 MM PITCH, MO-207, CSP-48
文件頁數(shù)： 1/44頁
文件大?。?/td> 429K
代理商： MX28F160C3TXAC-11
1
P/N:PM0867
REV. 1.2, MAR. 17, 2004
MX28F160C3T/B
16M-BIT [1M x16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
- Word write suspend to read
- Sector erase suspend to word write
- Sector erase suspend to read register report
Automatic sector erase, word write and sector lock/
unlock configuration
Status Reply
- Detection of program and erase operation comple-
tion.
- Command User Interface (CUI)
- Status Register (SR)
Data Protection Performance
- Include boot sectors and parameter and main sectors
to be locked/unlocked
100,000 minimum erase/program cycles
Common Flash Interface (CFI)
128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User-Programmable
Latch-up protected to 100mA from -1V to VCC+1V
Package type:
- 48-pin TSOP (12mm x 20mm)
- 48-ball CSP (8mm x 6mm)
FEATURES
Bit Organization: 1,048,576 x 16
Single power supply operation
- VCC=VCCQ=2.7~3.6V for read, erase and program
operation
- VPP=12V for fast production programming
- Operating temperature:-40
°
C~85
°
C
Fast access time : 70/90/110ns
Low power consumption
- 9mA typical active read current, f=5MHz
- 18mA typical program current (VPP=1.65~3.6V)
- 21mA typical erase current (VPP=1.65~3.6V)
- 7uA typical standby current under power saving
mode
Sector architecture
- Sector structure : 4Kword x 2 (boot sectors), 4Kword
x 6 (parameter sectors), 32Kword x 31 (main sectors)
- Top/Bottom Boot
Auto Erase and Auto Program
- Automatically program and verify data at specified
address
- Auto sector erase at specified sector
Automatic Suspend Enhance
GENERAL DESCRIPTION
The MX28F160C3T/B is a 16-mega bit Flash memory
organized as 1M words of 16 bits. The 1M word of data
is arranged in eight 4Kword boot and parameter sectors,
and thirty-one 32K word main sectors which are indi-
vidually erasable. MXIC's Flash memories offer the most
cost-effective and reliable read/write non-volatile random
access memory. The MX28F160C3T/B is packaged in
48-pin TSOP and 48-ball CSP. It is designed to be re-
programmed and erased in system or in standard
EPROM programmers.
The standard MX28F160C3T/B offers access time as
fast as 70ns, allowing operation of high-speed micropro-
cessors without wait states.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX28F160C3T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
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