參數(shù)資料
型號(hào): MX28F1000PTI-12
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 1M-BIT [128K x 8] CMOS FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
封裝: PLASTIC, TSOP1-32
文件頁(yè)數(shù): 6/33頁(yè)
文件大?。?/td> 127K
代理商: MX28F1000PTI-12
6
P/N: PM0340
REV. 1.6, JAN. 19, 1999
MX28F1000P
TABLE 1. COMMAND DEFINITIONS
COMMAND
BUS
FIRST BUS CYCLE
SECOND BUS CYCLE
CYCLES
OPERATION
ADDRESS
DATA
OPERATION
ADDRESS
DATA
Read Memory
1
Write
X
00H
Read Identified codes
2
Write
X
90H
Read
IA
ID
Setup auto erase/
auto erase (chip)
2
Write
X
30H
Write
X
30H
Setup auto erase/
auto erase (block)
2
Write
X
20H
Write
EA
D0H
Setup auto program/
program
2
Write
X
40H
Write
PA
PD
Setup Erase/
Erase (chip)
2
Write
X
20H
Write
X
20H
Setup Erase/
Erase (block)
2
Write
X
60H
Write
EA
60H
Erase verify
2
Write
EVA
A0H
Read
X
EVD
Reset
2
Write
X
FFH
Write
X
FFH
Note:
IA
EA
PA
= Identifier address
= Block of memory location to be erased
= Address of memory location to be pro-
grammed
= Data read from location IA during device iden-
tification
= Data to be programmed at location PA
EVA = Address of memory location to be read during
erase verify.
EVD = Data read from location EVA during erase
verify.
Auto modes have the build-in enchanced features.
Please use the auto erase mode whenever it is.
ID
PD
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