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參數(shù)資料
| 型號： | MX1N6370 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| 封裝： | HERMETIC SEALED, METAL, DO-13, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 165K |
| 代理商： | MX1N6370 |
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
1N6
356
thru
1N6
372,
e3
MPT-5
th
ru
MPT-45
C,
e3
ELECTRICAL CHARACTERISTICS @ 25oC (Unidirectional)
MICROSEMI
PART NUMBER
STAND-OFF
VOLTAGE
(NOTE 1)
VWM
VOLTS
MAXIMUM
REVERSE
LEAKAGE
@VWM
ID
μA
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V(BR) (min)
VOLTS
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
IPP1 = 1A
VC
VOLTS
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
VOLTS
MAXIMUM
PEAK PULSE
CURRENT
IPP3
A
1N6356
1N6357
1N6358
1N6359
1N6360
MPT-5
MPT-8
MPT-10
MPT-12
MPT-15
5.0
8.0
10.0
12.0
15.0
300
25
2
6.0
9.4
11.7
14.1
17.6
7.1
11.3
13.7
16.1
20.1
7.5
11.5
14.1
16.5
20.6
160
100
90
70
60
1N6361
1N6362
1N6363
1N6364
MPT-18
MPT-22
MPT-36
MPT-45
18.0
22.0
36.0
45.0
2
21.2
25.9
42.4
52.9
24.2
29.8
50.6
63.3
25.2
32.0
54.3
70.0
50
40
23
19
VF at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave.
ELECTRICAL CHARACTERISTICS @ 25oC (Bidirectional)
1N6365
1N6366
1N6367
1N6368
MPT-5C
MPT-8C
MPT-10C
MPT-12C
MPT-15C
5.0
8.0
10.0
12.0
15.0
300
25
2
6.0
9.4
11.7
14.1
17.6
7.1
11.4
14.1
16.7
20.8
7.5
11.6
14.5
17.1
21.4
160
100
90
70
60
1N6369
1N6370
1N6371
1N6372
MPT-18C
MPT-22C
MPT-36C
MPT-45C
18.0
22.0
36.0
45.0
2
21.2
25.9
42.4
52.9
24.8
30.8
50.6
63.3
25.5
32.0
54.3
70.0
50
40
23
19
C Suffix indicates Bidirectional
NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the DC or
continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
GRAPHS
Microsemi
Scottsdale Division
Page 2
Copyright
2007
10-03-2007 REV C
FIGURE 1
FIGURE 2
Peak Pulse Power vs. Pulse Time
Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料 |
PDF描述 |
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| MQMPT-36E3TR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| MQMPT-5CE3TR | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| MVMPT-10E3TR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| MVMPT-15C | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| MVMPT-45TR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
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