參數(shù)資料
型號(hào): MWT-16
廠商: MICROWAVE TECHNOLOGY INC
元件分類: 小信號(hào)晶體管
英文描述: K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
文件頁數(shù): 2/2頁
文件大小: 113K
代理商: MWT-16
MwT-16
26 GHz High Power
GaAs FET
MwT-16
26 GHz High Power
GaAs FET
75
°°°°°C or Lower
100
125
75
°°°°°C or Lower
100
125
150
0
2
4
6
8
500
400
300
200
100
0
Vds (V)
Ids
(mA)
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MwT-16
DUAL BIAS
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
18 Mils Long
2 Mils
MwT
FPH16
2 Mils
MwT-16
OPTIONAL SINGLE BIAS WITH CAPS
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Bonding Configuration used to Obtain “S” Data
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
12 Mils Long
13 Mils Long
2 Mils
MwT
FPH16
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of Microstrip
Gold Blocks
10x10x5 for
Dual Bias, or
25 pF Caps
for Single
Bias (2 each)
MwT-16
OPTIONAL BONDING
Gold Ridge
5x33x5 Mils
(2 each)
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
12 Mils Long
13 Mils Long
MwT
FPH16
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level
of Microstrip
25 pF Caps
10x33x5 Mils
(2 each)
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
Absolute Maximum Continuous Maximum
MAXIMUM RATINGS AT Ta = 25
°°°°°C
SYMBOL
VDS
Tch
Tst
Pin
PARAMETER
UNITS
CONT MAX1
ABSOLUTE MAX2
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
See Safe Operating Limits
°C
280
+175
430
V
mW
-65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MAXIMUM RATINGS AT Ta = 25
°°°°°C
BIN ACCURACY STATEMENT
IDSS
(mA)
BIN#
1
2
3
90-
105
105-
120
120-
135
45
6
135-
150
150-
165
165-
180
78
9
180-
195
195-
210
210-
225
10
11
12
225-
240
240-
255
255-
270
13
14
15
270-
285
285-
300
300-
315
16
17
18
315-
330
330-
345
345-
360
BIN SELECTION
相關(guān)PDF資料
PDF描述
MWT-173GG X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
MWT-173SG X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
MWT-1GG X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
MWT-1SG X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
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