參數(shù)資料
型號： MWT-15
廠商： MICROWAVE TECHNOLOGY INC
元件分類： 小信號晶體管
英文描述： K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
封裝： DIE-11
文件頁數(shù)： 1/2頁
文件大小： 115K
代理商： MWT-15
MwT-15
26 GHz Power
GaAs FET
DESCRIPTION
The MwT-15 is a GaAs MESFET device whose nominal quarter micron gate length and 630 micron gate width make it ideally suited to
applications requiring high-gain in the 500 MHz to 26 GHz frequency range with power outputs ranging from 100-200 milli-watts. The
straight geometry of the MwT-15 makes it equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is
produced using MwT’s reliable metal system and all devices are screened to insure reliability. All chips are passivated using MwT’s
patented “Diamond-Like Carbon” process for increased durability. Designers can use MwT’s unique BIN selection feature to choose
devices from narrow Idss ranges, insuring consistent circuit operation.
50
52
50
52
50
52
775
35
MwT-15
26 GHz Power
GaAs FET
35
75
72
241
CHIP THICKNESS = 125 MICRONS
Lg
Rg
Rd
Ld
Cgd
GATE
DRAIN
Cgs
Cpg
Rds
Cds
Cpd
Ri
Rs
Ls
gm
tau
SOURCE
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
ORDERING INFORMATION
Chip
MwT-15
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening
level required.
+24 dBm POWER OUTPUT AT 12 GHz
9.5 dB SMALL SIGNAL GAIN AT 12 GHz
0.3 MICRON REFRACTORY METAL/GOLD GATE
630 MICRON GATE WIDTH
All Dimensions in Microns
FEATURES
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
SSG
PAE
Output Power at 1 dB Compression
VDS= 6.0 V Idss= 0.6 IDS=110mA
Small Signal Gain
VDS= 6.0 V Idss= 0.6 IDS=110mA
Power Added Efficiency
VDS= 6.0 V Idss= 0.6 IDS=110mA
12 GHz
dBm
dB
%
23.0
8.5
24.5
9.5
35
RF SPECIFICATIONS AT Ta = 25
°°°°°C
Idss
Recommended IDSS Range
for Optimum P1dB
mA
160-
220
DC SPECIFICATIONS AT Ta = 25
°°°°°C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 4.0 mA
Gate-to-Source Breakdown Volt.
Igs= -0.4mA, Igd= 0
Gate-to-Drain Breakdown Volt.
Igd= -0.4 mA, Igs= 0
mA
60
-2.0
240
mS
75
100
-5.0
V
°C/W
-6.0
-8.0
-12.0
80
Rth
Thermal
Resistance
30
DC SPECIFICATIONS AT Ta = 25
°°°°°C
RF SPECIFICATIONS AT Ta = 25
°°°°°C
MwT-15 Chip
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.07
nH
0.20
pF
0.10
0.61
pF
2.31
0.03
pF
100.0
mS
2.6
psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
0.10
0.03
nH
170.0
0.08
pF
.84
0.05
pF
0.10
nH
ORDERING INFORMATION
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
18 GHz
dBm
24.0
18 GHz
dB
8.0
7.0
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