參數(shù)資料
型號(hào)： MWT-12
廠商： MICROWAVE TECHNOLOGY INC
元件分類： 功率晶體管
英文描述： KU BAND, GaAs, RF POWER, MESFET
封裝： DIE-7
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 97K
代理商： MWT-12
MwT-12
18 GHz High Power
GaAs FET
MwT-12
18 GHz High Power
GaAs FET
DESCRIPTION
The MwT-12 is a GaAs MESFET device whose nominal quarter-micron gate length and 900 micron gate width make it ideally suited to
applications requiring high-power in the 2 GHz to 18 GHz frequency range. The straigth gate geometry of the MwT-12 makes it equally
effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using MwT’s reliable metal system and
all devices are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like Carbon” process for increased
durability. Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss ranges, insuring consistent circuit
operation.
Lg
Rg
Rd
Ld
Cgd
GATE
DRAIN
Cgs
Cpg
Rds
Cds
Cpd
Ri
Rs
Ls
gm
tau
SOURCE
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
ORDERING INFORMATION
Chip
MwT-12
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening
level required.
0.5 WATT POWER OUTPUT AT 12 GHz
+39 dBm THIRD ORDER INTERCEPT
0.3 MICRON REFRACTORY METAL/GOLD GATE
HIGH ASSOCIATED GAIN
900 MICRON GATE WIDTH
DIAMOND-LIKE CARBON (DLC) PASSIVATION
FEATURES
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
SSG
PAE
Output Power at 1 dB Compression
VDS= 6.0 V IDS=150mA
Small Signal Gain
VDS= 6.0 V IDS=150mA
Power Added Efficiency
VDS= 6.0 V IDS=150mA
12 GHz
dBm
dB
%
26.0
7.5
27.0
8.0
35
RF SPECIFICATIONS AT Ta = 25
°°°°°C
IDSS
Recommended IDSS Range
for Optimum P1dB
mA
240-
330
DC SPECIFICATIONS AT Ta = 25
°°°°°C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 6.0 mA
Gate-to-Source Breakdown Volt.
Igs= -0.6mA
Gate-to-Drain Breakdown Volt.
Igd= -0.6 mA
mA
90
-2.0
360
mS
108
120
-5.0
V
°C/W
-6.0
-8.0
-12.0
55
Rth
Thermal
Resistance
25
DC SPECIFICATIONS AT Ta = 25
°°°°°C
RF SPECIFICATIONS AT Ta = 25
°°°°°C
MwT-12 Chip
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.15
nH
0.3
pF
0.1
0.85
pF
2.73
0.03
pF
140
mS
0.7
psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
0.3
0.05
nH
90.0
0.04
pF
1.04
.218
pF
.132
nH
ORDERING INFORMATION
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
PHOTO FORTHCOMING
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