參數資料
型號: MWS5114E2X
廠商: INTERSIL CORP
元件分類: DRAM
英文描述: 1024-Word x 4-Bit LSI Static RAM
中文描述: 1K X 4 STANDARD SRAM, 250 ns, PDIP18
封裝: PLASTIC, DIP-18
文件頁數: 1/7頁
文件大?。?/td> 29K
代理商: MWS5114E2X
6-160
March 1997
MWS5114
1024-Word x 4-Bit
LSI Static RAM
Features
Fully Static Operation
Industry Standard 1024 x 4 Pinout (Same as Pinouts
for 6514, 2114, 9114, and 4045 Types)
Common Data Input and Output
Memory Retention for Standby Battery Voltage as Low
as 2V Min
All Inputs and Outputs Directly TTL Compatible
Three-State Outputs
Low Standby and Operating Power
Description
The MWS5114 is a 1024 word by 4-bit static random access
memory that uses the ion-implanted silicon gate comple-
mentary MOS (CMOS) technology. It is designed for use in
memory systems where low power and simplicity in use are
desirable. This type has common data input and data output
and utilizes a single power supply of 4.5V to 6.5V.
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line
sidebrazed ceramic packages (D suffix) and in 18 lead dual-
in-line plastic packages (E suffix).
Pinout
MWS5114
(PDIP, SBDIP)
TOP VIEW
Ordering Information
200ns
250ns
300ns
TEMPERATURE RANGE
0
o
C to +70
o
C
PACKAGE
PKG. NO.
MWS5114E3
MWS5114E2
MWS5114E2X
MWS5114E1
PDIP
Burn-In
E18.3
E18.3
MWS5114D3
MWS5114D3X
MWS5114D2
MWS5114D1
0
o
C to +70
o
C
SBDIP
Burn-In
D18.3
D18.3
OPERATIONAL MODES
FUNCTION
CS
WE
DATA PINS
Read
0
1
Output: Dependent on data
Write
0
0
Input
Not Selected
1
X
High Impedance
10
11
12
13
14
15
16
17
18
9
8
7
6
5
4
3
2
1
V
DD
A8
A9
I/O1
I/O2
I/O3
I/O4
A7
WE
A6
A5
A4
A3
A0
A1
CS
A2
V
SS
File Number
1325.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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