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參數(shù)資料
| 型號(hào)： | MWS5114D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | Static RAM |
| 英文描述： | 1K X 4 STANDARD SRAM, 200 ns, CDIP18 |
| 封裝： | SIDE BRAZED, CERAMIC, DIP-18 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 121K |
| 代理商： | MWS5114D3 |
6-165
NOTE:
1. WE is high during the Read Cycle. Timing measurement reference level is 1.5V.
FIGURE 1. READ CYCLE TIMING WAVEFORMS
NOTE:
1. WE is low during the Write Cycle. Timing measurement reference level is 1.5V.
FIGURE 2. WRITE CYCLE TIMING WAVEFORMS
ADDRESS
tRC
tAA
VALID
ACTIVE
DOUT
CS
tCX
tCO
tOTD
tOHA
tWC
ADDRESS
CS
tACS
tWR
tW
tAW
DON’T CARE
VALID
tDSU
tDH
WE
DIN
Data Retention Specifications at TA = 0oC to +70oC; See Figure 3
PARAMETER
SYMBOL
TEST
CONDITIONS
LIMITS
UNITS
VDR
(V)
VDD
(V)
ALL TYPES
MIN
(NOTE 1)
TYP
MAX
Minimum Data Retention Voltage
VDR
-
2
-
V
Data Retention Quiescent
Current
MWS5114-3
IDD
2
-
25
50
A
MWS5114-2
2
-
25
50
A
MWS5114-1
2
-
60
125
A
Chip Deselect to Data Retention Time
tCDR
-
5
300
-
ns
Recovery to Normal Operation Time
tRC
-
5
300
-
ns
VDD to VDR Rise and Fall Time
tR, tF
251
-
s
MWS5114
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| MWS5114D3X | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024-Word x 4-Bit LSI Static RAM |
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| MWS5114E2X | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024-Word x 4-Bit LSI Static RAM |
| MWS5114E3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024-Word x 4-Bit LSI Static RAM |
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